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Results: 1-7 |
Results: 7

Authors: BOTNARYUK VM ZHILYAEV YV IVANOV AM STROKAN NB FEDOROV LM
Citation: Vm. Botnaryuk et al., BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS, Technical physics letters, 24(4), 1998, pp. 250-253

Authors: BOTNARYUK VM GORCHAK LV RAEVSKII SD SHERBAN DA RUD VY RUD YV
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF ITO P(+)-P(-)-INP SOLAR-CELLS IN LINEARLYPOLARIZED-LIGHT/, Technical physics, 43(5), 1998, pp. 546-549

Authors: BOTNARYUK VM RAEVSKII SD BELKOV VV ZHILYAEV YV RUD YV FEDOROV LM RUD VY
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF GAN GAP HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1077-1079

Authors: BOTNARYUK VM GORCHAK LV DIACONU II RUD VY RUD YV
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF N-CDS P-INP HETEROJUNCTIONS/, Semiconductors, 32(1), 1998, pp. 61-66

Authors: BELKOV VV BOTNARYUK VM FEDOROV LM GONCHARUK IN NOVIKOV SV ULIN VP ZHILYAEV YV CHENG TS JEFFS NJ FOXON CT KATSAVETS NI HARRISON I
Citation: Vv. Belkov et al., HYDRIDE VAPOR-PHASE EPITAXY OF GAN ON MOLECULAR-BEAM EPITAXIAL GAN SUBSTRATES, Journal of crystal growth, 187(1), 1998, pp. 29-34

Authors: BOTNARYUK VM KOVAL AV SIMASHKEVICH AV SHERBAN DA RUD VY RUD YV
Citation: Vm. Botnaryuk et al., POLARIZATION PHOTOSENSITIVITY OF SILICON SOLAR-CELLS WITH AN ANTIREFLECTION COATING CONSISTING OF A MIXTURE OF INDIUM AND TIN OXIDES, Semiconductors, 31(7), 1997, pp. 677-680

Authors: BOTNARYUK VM GORCHAK LV PLESHKA VN RUD VY RUD YV
Citation: Vm. Botnaryuk et al., PHOTOSENSITIVITY OF INP CDS HETEROSTRUCTURES IN LINEARLY POLARIZED-LIGHT/, Semiconductors, 31(2), 1997, pp. 194-196
Risultati: 1-7 |