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Authors: LALLEMENT C BOUCHAKOUR R MAUREL T
Citation: C. Lallement et al., ONE-DIMENSIONAL ANALYTICAL MODELING OF THE VDMOS TRANSISTOR TAKING INTO ACCOUNT THE THERMOELECTRICAL INTERACTIONS, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 44(2), 1997, pp. 103-111

Authors: LIMBOURG I HARDY L JOURDAIN M BOUCHAKOUR R CHARLOT JJ
Citation: I. Limbourg et al., MODELING AND SIMULATION OF HOMOGENEOUS DEGRADATION FOR N-CHANNEL MOSFETS, Journal of non-crystalline solids, 187, 1995, pp. 160-164

Authors: LALLEMENT C BOUCHAKOUR R MAUREL T
Citation: C. Lallement et al., ONE-DIMENSIONAL ANALYTICAL MODELING OF THE VDMOS TRANSISTOR TAKING INTO ACCOUNT THE THERMOELECTRICAL INTERACTIONS, Annales des telecommunications, 49(9-10), 1994, pp. 543-553
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