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Results:
1-11
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Results: 11
Authors:
BOUHDADA A
TOUHAMI A
BAKKALI S
Citation: A. Bouhdada et al., NEW MODEL OF GATE-INDUCED DRAIN CURRENT-DENSITY IN AN NMOS TRANSISTOR, Microelectronics, 29(11), 1998, pp. 813-816
Authors:
FABRE A
ALAMI M
ALAOUI B
BOUHDADA A
Citation: A. Fabre et al., 6-TRANSISTOR TEMPERATURE COMPENSATED CURRENT SOURCE, International journal of electronics, 84(5), 1998, pp. 499-503
Authors:
FABRE A
ALAMI M
ALAOUI B
BOUHDADA A
Citation: A. Fabre et al., 2 NEW TEMPERATURE COMPENSATED CURRENT SOURCES, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 44(11), 1997, pp. 1071-1074
Authors:
AYADI M
SABRY A
CHOUIKH A
BOUHDADA A
Citation: M. Ayadi et al., DETERMINATION OF THE SPECIFIC-HEAT OF BAFBR, Annales de chimie, 22(3-4), 1997, pp. 253-257
Authors:
BOUHDADA A
BAKKALI S
TOUHAMI A
Citation: A. Bouhdada et al., MODELING OF GATE-INDUCED DRAIN LEAKAGE IN RELATION TO TECHNOLOGICAL PARAMETERS AND TEMPERATURE, Microelectronics and reliability, 37(4), 1997, pp. 649-652
Authors:
BOUHDADA A
BAKKALI S
NOUACRY A
TOUHAMI A
Citation: A. Bouhdada et al., RELATION BETWEEN THE LEAKAGE CURRENTS AND THE DEFECTS CREATED IN THE OXIDE AND AT THE INTERFACE IN A SHORT-CHANNEL NMOS TRANSISTOR, Microelectronics, 28(1), 1997, pp. 85-91
Authors:
TOUHAMI A
BOUHDADA A
Citation: A. Touhami et A. Bouhdada, INTERFACE STATES EFFECT AND INFLUENCE OF THE TOPOLOGICAL AND TECHNOLOGICAL PARAMETERS ON THE TRANSFER INEFFICIENCY IN THE SURFACE CHARGE-COUPLED-DEVICE (SCCD), Microelectronics and reliability, 36(5), 1996, pp. 661-665
Authors:
BOUHDADA A
OUALID J
Citation: A. Bouhdada et J. Oualid, MOS CAPACITOR HOLDING TIME AND DIFFUSION LENGTH AT DRAM REFRESH TEST TEMPERATURE, Microelectronics, 26(5), 1995, pp. 405-412
Authors:
BOUHDADA A
TOUHAMI A
Citation: A. Bouhdada et A. Touhami, THE SURFACE-STATES AND THE TEMPERATURE EF FECT ON THE TRANSFER EFFICIENCY IN SURFACE-CHANNEL CHARGE-COUPLED-DEVICES, Journal de physique. III, 4(11), 1994, pp. 2303-2316
Authors:
BOUHDADA A
MANSOURI I
Citation: A. Bouhdada et I. Mansouri, 4TH NORTH-AFRICAN MATERIALS SCIENCE SYMPO SIUM, JMSM-94 (CASABLANCA, MOROCCO, NOVEMBER 23-24, 1994) - PREFACE, Annales de chimie, 19(7-8), 1994, pp. 4-5
Authors:
BOUHDADA A
NOUACRY A
BAKKALI S
Citation: A. Bouhdada et al., INFLUENCE OF TECHNOLOGICAL PARAMETERS AND TEMPERATURE ON SUBSTRATE CURRENT MODELING IN SHORT-CHANNEL NMOS DEVICES, Annales de chimie, 19(7-8), 1994, pp. 477-482
Risultati:
1-11
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