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Results: 1-25 | 26-35
Results: 1-25/35
CHARACTERISTICS OF INGAN-ALGAN MULTIPLE-QUANTUM-WELL LASER-DIODES
Authors: BOUR DP KNEISSL M ROMANO LT MCCLUSKEY MD VANDEWALLE CG KRUSOR BS DONALDSON RM WALKER J DUNNROWICZ CJ JOHNSON NM
Citation: Dp. Bour et al., CHARACTERISTICS OF INGAN-ALGAN MULTIPLE-QUANTUM-WELL LASER-DIODES, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 498-504
WAFER FUSION OF INFRARED-LASER DIODES TO GAN LIGHT-EMITTING HETEROSTRUCTURES
Authors: FLOYD PD CHUA CL TREAT DW BOUR DP
Citation: Pd. Floyd et al., WAFER FUSION OF INFRARED-LASER DIODES TO GAN LIGHT-EMITTING HETEROSTRUCTURES, IEEE photonics technology letters, 10(11), 1998, pp. 1539-1541
PRESSURE-DEPENDENCE OF OPTICAL-TRANSITIONS IN IN0.15GA0.85N GAN MULTIPLE-QUANTUM WELLS/
Authors: SHAN W AGER JW WALUKIEWICZ W HALLER EE MCCLUSKEY MD JOHNSON NM BOUR DP
Citation: W. Shan et al., PRESSURE-DEPENDENCE OF OPTICAL-TRANSITIONS IN IN0.15GA0.85N GAN MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 58(16), 1998, pp. 10191-10194
METASTABILITY OF OXYGEN DONORS IN ALGAN
Authors: MCCLUSKEY MD JOHNSON NM VANDEWALLE CG BOUR DP KNEISSL M WALUKIEWICZ W
Citation: Md. Mccluskey et al., METASTABILITY OF OXYGEN DONORS IN ALGAN, Physical review letters, 80(18), 1998, pp. 4008-4011
PHASE-SEPARATION IN ANNEALED INGAN GAN MULTIPLE-QUANTUM WELLS/
Authors: ROMANO LT MCCLUSKEY MD KRUSOR BS BOUR DP CHUA C BRENNAN S YU KM
Citation: Lt. Romano et al., PHASE-SEPARATION IN ANNEALED INGAN GAN MULTIPLE-QUANTUM WELLS/, Journal of crystal growth, 190, 1998, pp. 33-36
DRY-ETCHING AND CHARACTERIZATION OF MIRRORS ON III-NITRIDE LASER-DIODES FROM CHEMICALLY ASSISTED ION-BEAM ETCHING
Authors: KNEISSL M HOFSTETTER D BOUR DP DONALDSON R WALKER J JOHNSON NM
Citation: M. Kneissl et al., DRY-ETCHING AND CHARACTERIZATION OF MIRRORS ON III-NITRIDE LASER-DIODES FROM CHEMICALLY ASSISTED ION-BEAM ETCHING, Journal of crystal growth, 190, 1998, pp. 846-849
STRUCTURAL AND OPTICAL-PROPERTIES OF EPITAXIALLY OVERGROWN 3RD-ORDER GRATINGS FOR INGAN GAN-BASED DISTRIBUTED-FEEDBACK LASERS/
Authors: ROMANO LT HOFSTETTER D MCCLUSKEY MD BOUR DP KNEISSL M
Citation: Lt. Romano et al., STRUCTURAL AND OPTICAL-PROPERTIES OF EPITAXIALLY OVERGROWN 3RD-ORDER GRATINGS FOR INGAN GAN-BASED DISTRIBUTED-FEEDBACK LASERS/, Applied physics letters, 73(19), 1998, pp. 2706-2708
ROOM-TEMPERATURE PULSED OPERATION OF AN ELECTRICALLY INJECTED INGAN GAN MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER/
Authors: HOFSTETTER D THORNTON RL ROMANO LT BOUR DP KNEISSL M DONALDSON RM
Citation: D. Hofstetter et al., ROOM-TEMPERATURE PULSED OPERATION OF AN ELECTRICALLY INJECTED INGAN GAN MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER/, Applied physics letters, 73(15), 1998, pp. 2158-2160
DEMONSTRATION OF AN INGAN GAN-BASED OPTICALLY PUMPED MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER USING HOLOGRAPHICALLY DEFINED 3RD-ORDER GRATINGS/
Authors: HOFSTETTER D THORNTON RL KNEISSL M BOUR DP DUNNROWICZ C
Citation: D. Hofstetter et al., DEMONSTRATION OF AN INGAN GAN-BASED OPTICALLY PUMPED MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER USING HOLOGRAPHICALLY DEFINED 3RD-ORDER GRATINGS/, Applied physics letters, 73(14), 1998, pp. 1928-1930
STRUCTURAL AND OPTICAL-PROPERTIES OF PSEUDOMORPHIC INXGA1-XN ALLOYS
Authors: ROMANO LT KRUSOR BS MCCLUSKEY MD BOUR DP NAUKA K
Citation: Lt. Romano et al., STRUCTURAL AND OPTICAL-PROPERTIES OF PSEUDOMORPHIC INXGA1-XN ALLOYS, Applied physics letters, 73(13), 1998, pp. 1757-1759
COMPARISON STUDY OF PHOTOLUMINESCENCE FROM INGAN GAN MULTIPLE-QUANTUMWELLS AND INGAN EPITAXIAL LAYERS UNDER LARGE HYDROSTATIC-PRESSURE/
Authors: SHAN W PERLIN P AGER JW WALUKIEWICZ W HALLER EE MCCLUSKEY MD JOHNSON NM BOUR DP
Citation: W. Shan et al., COMPARISON STUDY OF PHOTOLUMINESCENCE FROM INGAN GAN MULTIPLE-QUANTUMWELLS AND INGAN EPITAXIAL LAYERS UNDER LARGE HYDROSTATIC-PRESSURE/, Applied physics letters, 73(12), 1998, pp. 1613-1615
PHASE-SEPARATION IN INGAN GAN MULTIPLE-QUANTUM WELLS/
Authors: MCCLUSKEY MD ROMANO LT KRUSOR BS BOUR DP JOHNSON NM BRENNAN S
Citation: Md. Mccluskey et al., PHASE-SEPARATION IN INGAN GAN MULTIPLE-QUANTUM WELLS/, Applied physics letters, 72(14), 1998, pp. 1730-1732
CHARACTERIZATION OF ALGAINN DIODE-LASERS WITH MIRRORS FROM CHEMICALLYASSISTED ION-BEAM ETCHING
Authors: KNEISSL M BOUR DP JOHNSON NM ROMANO LT KRUSOR BS DONALDSON R WALKER J DUNNROWICZ C
Citation: M. Kneissl et al., CHARACTERIZATION OF ALGAINN DIODE-LASERS WITH MIRRORS FROM CHEMICALLYASSISTED ION-BEAM ETCHING, Applied physics letters, 72(13), 1998, pp. 1539-1541
NITRIDE-BASED SEMICONDUCTORS FOR BLUE AND GREEN LIGHT-EMITTING DEVICES
Authors: PONCE FA BOUR DP
Citation: Fa. Ponce et Dp. Bour, NITRIDE-BASED SEMICONDUCTORS FOR BLUE AND GREEN LIGHT-EMITTING DEVICES, Nature, 386(6623), 1997, pp. 351-359
CHARACTERIZATION OF INTRACAVITY REFLECTIONS BY FOURIER TRANSFORMING SPECTRAL DATA OF OPTICALLY PUMPED INGAN LASERS
Authors: HOFSTETTER D ROMANO LT THORNTON RL BOUR DP JOHNSON NM
Citation: D. Hofstetter et al., CHARACTERIZATION OF INTRACAVITY REFLECTIONS BY FOURIER TRANSFORMING SPECTRAL DATA OF OPTICALLY PUMPED INGAN LASERS, Applied physics letters, 71(22), 1997, pp. 3200-3202
EXCITATION OF A HIGHER-ORDER TRANSVERSE-MODE IN AN OPTICALLY PUMPED IN0.15GA0.85N IN0.05GA0.95N MULTIQUANTUM-WELL LASER STRUCTURE/
Authors: HOFSTETTER D BOUR DP THORNTON RL JOHNSON NM
Citation: D. Hofstetter et al., EXCITATION OF A HIGHER-ORDER TRANSVERSE-MODE IN AN OPTICALLY PUMPED IN0.15GA0.85N IN0.05GA0.95N MULTIQUANTUM-WELL LASER STRUCTURE/, Applied physics letters, 70(13), 1997, pp. 1650-1652
HIGH-PERFORMANCE 660NM INGAP ALGAINP QUANTUM-WELL METAL CLADDING RIDGE-WAVE-GUIDE LASER-DIODE/
Authors: SUN D TREAT DW BOUR DP
Citation: D. Sun et al., HIGH-PERFORMANCE 660NM INGAP ALGAINP QUANTUM-WELL METAL CLADDING RIDGE-WAVE-GUIDE LASER-DIODE/, Electronics Letters, 32(16), 1996, pp. 1488-1490
DETERMINATION OF LATTICE POLARITY FOR GROWTH OF GAN BULK SINGLE-CRYSTALS AND EPITAXIAL LAYERS
Authors: PONCE FA BOUR DP YOUNG WT SAUNDERS M STEEDS JW
Citation: Fa. Ponce et al., DETERMINATION OF LATTICE POLARITY FOR GROWTH OF GAN BULK SINGLE-CRYSTALS AND EPITAXIAL LAYERS, Applied physics letters, 69(3), 1996, pp. 337-339
LOCAL VIBRATIONAL-MODES OF THE MG-H ACCEPTOR COMPLEX IN GAN
Authors: GOTZ W JOHNSON NM BOUR DP MCCLUSKEY MD HALLER EE
Citation: W. Gotz et al., LOCAL VIBRATIONAL-MODES OF THE MG-H ACCEPTOR COMPLEX IN GAN, Applied physics letters, 69(24), 1996, pp. 3725-3727
HOMOEPITAXY OF GAN ON POLISHED BULK SINGLE-CRYSTALS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: PONCE FA BOUR DP GOTZ W JOHNSON NM HELAVA HI GRZEGORY I JUN J
Citation: Fa. Ponce et al., HOMOEPITAXY OF GAN ON POLISHED BULK SINGLE-CRYSTALS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(7), 1996, pp. 917-919
ACTIVATION OF ACCEPTORS IN MG-DOPED GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: GOTZ W JOHNSON NM WALKER J BOUR DP STREET RA
Citation: W. Gotz et al., ACTIVATION OF ACCEPTORS IN MG-DOPED GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(5), 1996, pp. 667-669
SPATIAL-DISTRIBUTION OF THE LUMINESCENCE IN GAN THIN-FILMS
Authors: PONCE FA BOUR DP GOTZ W WRIGHT PJ
Citation: Fa. Ponce et al., SPATIAL-DISTRIBUTION OF THE LUMINESCENCE IN GAN THIN-FILMS, Applied physics letters, 68(1), 1996, pp. 57-59
HIGH-POWER CW OPERATION OF ALGAINP LASER-DIODE ARRAY OF 640 NM
Authors: SKIDMORE JA EMANUEL MA BEACH RJ BENETT WJ FREITAS BL CARLSON NW SOLARZ RW BOUR DP TREAT DW
Citation: Ja. Skidmore et al., HIGH-POWER CW OPERATION OF ALGAINP LASER-DIODE ARRAY OF 640 NM, IEEE photonics technology letters, 7(2), 1995, pp. 133-135
ROLE OF SUBLINEAR GAIN-CURRENT RELATIONSHIP IN COMPRESSIVE AND TENSILE-STRAINED 630 NM GAINP LASERS
Authors: SMOWTON PM BLOOD P MOGENSEN PC BOUR DP
Citation: Pm. Smowton et al., ROLE OF SUBLINEAR GAIN-CURRENT RELATIONSHIP IN COMPRESSIVE AND TENSILE-STRAINED 630 NM GAINP LASERS, International journal of optoelectronics, 10(5), 1995, pp. 383-391
ANOMALOUS LIGHT-EMISSION FROM SEMICONDUCTOR-LASER MATERIAL DURING PULSED ANODIZATION
Authors: LARGENT CC GROVE MJ HUDSON DA ZORY PS BOUR DP
Citation: Cc. Largent et al., ANOMALOUS LIGHT-EMISSION FROM SEMICONDUCTOR-LASER MATERIAL DURING PULSED ANODIZATION, Solid-state electronics, 38(10), 1995, pp. 1839-1841
Risultati: 1-25 | 26-35