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Results: 1-10 |
Results: 10
A GA4N8 CAGE STRUCTURE FORMED BY REACTION OF TRIMETHYLGALLIUM WITH PHENYLHYDRAZINE
Authors: PETERS DW POWER MP BOURRET ED ARNOLD J
Citation: Dw. Peters et al., A GA4N8 CAGE STRUCTURE FORMED BY REACTION OF TRIMETHYLGALLIUM WITH PHENYLHYDRAZINE, Chemical communications, (7), 1998, pp. 753-754
INTERFACIAL REACTION BEHAVIOR OF PT, PD, AND NI ON ZNSE
Authors: DUXSTAD KJ HALLER EE YU KM BOURRET ED LIN XW RUVIMOV S LILIENTALWEBER Z WASHBURN J
Citation: Kj. Duxstad et al., INTERFACIAL REACTION BEHAVIOR OF PT, PD, AND NI ON ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 891-898
STRUCTURAL CHARACTERIZATION OF THIN NI FILMS DEPOSITED ON (001)ZNSE
Authors: RUVIMOV S LILIENTALWEBER Z BOURRET ED SWIDER W WASHBURN J DUXSTAD KJ HALLER EE
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF THIN NI FILMS DEPOSITED ON (001)ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 247-251
NUCLEATION AND EVOLUTION OF MISFIT DISLOCATIONS IN ZNSE GAAS(001) HETEROSTRUCTURES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY/
Authors: RUVIMOV S BOURRET ED WASHBURN J LILIENTALWEBER Z
Citation: S. Ruvimov et al., NUCLEATION AND EVOLUTION OF MISFIT DISLOCATIONS IN ZNSE GAAS(001) HETEROSTRUCTURES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY/, Applied physics letters, 68(3), 1996, pp. 346-348
METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF SEMICONDUCTING III VI IN2SE3 THIN-FILMS FORM THE SINGLE-SOURCE PRECURSOR - IN[SEC(SIME(3))(3)](3)/
Authors: CHEON JW ARNOLD J YU KM BOURRET ED
Citation: Jw. Cheon et al., METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF SEMICONDUCTING III VI IN2SE3 THIN-FILMS FORM THE SINGLE-SOURCE PRECURSOR - IN[SEC(SIME(3))(3)](3)/, Chemistry of materials, 7(12), 1995, pp. 2273-2276
GROWTH AND CHARACTERIZATION OF ZNSE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING DIISOPROPYL SELENIDE AND DIETHYL ZINC
Authors: BOURRET ED ZACH FX YU KM WALKER JM
Citation: Ed. Bourret et al., GROWTH AND CHARACTERIZATION OF ZNSE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING DIISOPROPYL SELENIDE AND DIETHYL ZINC, Journal of crystal growth, 147(1-2), 1995, pp. 47-54
ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS
Authors: PALCZEWSKA M JASINSKI J KORONA K KAMINSKA M BOURRET ED ELLIOT AG
Citation: M. Palczewska et al., ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS, Journal of applied physics, 78(6), 1995, pp. 3680-3685
SOLID-STATE REACTION IN PD ZNSE THIN-FILM CONTACTS/
Authors: DUXSTAD KJ HALLER EE YU KM BOURRET ED WALKER JM LIN XW WASHBURN J
Citation: Kj. Duxstad et al., SOLID-STATE REACTION IN PD ZNSE THIN-FILM CONTACTS/, Applied physics letters, 67(7), 1995, pp. 947-949
HIGH-DOSE CL IMPLANTATION IN ZNSE - IMPURITY INCORPORATION AND RADIATION-DAMAGE
Authors: YU KM AGER JW BOURRET ED WALKER J WALUKIEWICZ W
Citation: Km. Yu et al., HIGH-DOSE CL IMPLANTATION IN ZNSE - IMPURITY INCORPORATION AND RADIATION-DAMAGE, Journal of applied physics, 75(3), 1994, pp. 1378-1383
STRUCTURES AND ELECTRONIC-PROPERTIES OF MISFIT DISLOCATIONS IN ZNSE GAAS(001) HETEROJUNCTIONS/
Authors: CHEN Y LIU X WEBER E BOURRET ED LILIENTALWEBER Z HALLER EE WASHBURN J OLEGO DJ DORMAN DR GAINES JM TASKER NR
Citation: Y. Chen et al., STRUCTURES AND ELECTRONIC-PROPERTIES OF MISFIT DISLOCATIONS IN ZNSE GAAS(001) HETEROJUNCTIONS/, Applied physics letters, 65(5), 1994, pp. 549-551
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