Citation: Pk. Baumann et al., CHARACTERIZATION OF METAL-DIAMOND INTERFACES - ELECTRON-AFFINITY AND SCHOTTKY-BARRIER HEIGHT, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 398-402
Authors:
BOZEMAN SP
CAMPHAUSEN SM
CUOMO JJ
KIM SI
AHN YO
KO Y
Citation: Sp. Bozeman et al., ELECTRON FIELD-EMISSION FROM AMORPHOUS CARBON-CESIUM ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1729-1732
Authors:
TUCKER DA
SEO DK
WHANGBO MH
SIVAZLIAN FR
STONER BR
BOZEMAN SP
SOWERS AT
NEMANICH RJ
GLASS JT
Citation: Da. Tucker et al., COMPARISON OF SILICON, NICKEL, AND NICKEL SILICIDE (NI3SI) AS SUBSTRATES FOR EPITAXIAL DIAMOND GROWTH, Surface science, 334(1-3), 1995, pp. 179-194
Authors:
BOZEMAN SP
TUCKER DA
STONER BR
GLASS JT
HOOKE WM
Citation: Sp. Bozeman et al., DIAMOND DEPOSITION USING A PLANAR RADIO-FREQUENCY INDUCTIVELY-COUPLEDPLASMA, Applied physics letters, 66(26), 1995, pp. 3579-3581
Citation: T. Munsat et al., 2 NEW PLANAR COIL DESIGNS FOR A HIGH-PRESSURE RADIO-FREQUENCY PLASMA SOURCE, Applied physics letters, 66(17), 1995, pp. 2180-2182