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Results: 1-25/32
Authors:
WIMBAUER T
BRANDT MS
BAYERL MW
REINACHER NM
STUTZMANN M
HOFMANN DM
MOCHIZUKI Y
MIZUTA M
Citation: T. Wimbauer et al., RECOMBINATION CENTERS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES INVESTIGATED BY OPTICALLY AND ELECTRICALLY DETECTED MAGNETIC-RESONANCE/, Physical review. B, Condensed matter, 58(8), 1998, pp. 4892-4902
Authors:
BRANDT MS
HERBST P
ANGERER H
AMBACHER O
STUTZMANN M
Citation: Ms. Brandt et al., THERMOPOWER INVESTIGATION OF N-TYPE AND P-TYPE GAN, Physical review. B, Condensed matter, 58(12), 1998, pp. 7786-7791
Authors:
BRANDT MS
BAYERL MW
STUTZMANN M
GRAEFF CFO
Citation: Ms. Brandt et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE OF A-SI-H AT LOW MAGNETIC-FIELDS - THE INFLUENCE OF HYDROGEN ON THE DANGLING BOND RESONANCE, Journal of non-crystalline solids, 230, 1998, pp. 343-347
Authors:
ZAMANZADEHHANEBUTH N
BRANDT MS
STUTZMANN M
Citation: N. Zamanzadehhanebuth et al., VIBRATIONAL PROPERTIES OF SILOXENE - ISOTOPE SUBSTITUTION STUDIES, Journal of non-crystalline solids, 230, 1998, pp. 503-506
Authors:
KAWACHI G
GRAEFF CFO
BRANDT MS
STUTZMANN M
Citation: G. Kawachi et al., SATURATION MEASUREMENTS OF ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON BASED THIN-FILM TRANSISTORS, JPN J A P 1, 36(1A), 1997, pp. 121-125
Authors:
STUTZMANN M
AMBACHER O
CROS A
BRANDT MS
ANGERER H
DIMITROV R
REINACHER N
METZGER T
HOPLER R
BRUNNER D
FREUDENBERG F
HANDSCHUH R
DEGER C
Citation: M. Stutzmann et al., PROPERTIES AND APPLICATIONS OF MBE GROWN ALGAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 212-218
Authors:
BRANDT MS
PUCHERT T
STUTZMANN M
Citation: Ms. Brandt et al., ELECTRONIC TRANSPORT IN CRYSTALLINE SILOXENE, Solid state communications, 102(5), 1997, pp. 365-368
Authors:
GRAEFF CFO
BRANDT MS
FARIA RM
LEISING G
Citation: Cfo. Graeff et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN UNDOPED POLYACETYLENE ANDPOLYANILINE, Physica status solidi. a, Applied research, 162(2), 1997, pp. 713-721
Authors:
BAYERL MW
BRANDT MS
STUTZMANN M
Citation: Mw. Bayerl et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE (EDMR) OF DEFECTS IN GAN LIGHT-EMITTING-DIODES, Physica status solidi. a, Applied research, 159(2), 1997, pp. 5-6
Authors:
BRANDT MS
READY SE
BOYCE JB
Citation: Ms. Brandt et al., SI-29 NUCLEAR-MAGNETIC-RESONANCE OF LUMINESCENT SILICON, Applied physics letters, 70(2), 1997, pp. 188-190
Authors:
AMBACHER O
BRANDT MS
DIMITROV R
METZGER T
STUTZMANN M
FISCHER RA
MIEHR A
BERGMAIER A
DOLLINGER G
Citation: O. Ambacher et al., THERMAL-STABILITY AND DESORPTION OF GROUP-III NITRIDES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3532-3542
Authors:
ROSSI MC
BRANDT MS
STUTZMANN M
Citation: Mc. Rossi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS SILICON-OXIDE WITH VISIBLE ROOM-TEMPERATURE PHOTOLUMINESCENCE, Applied surface science, 102, 1996, pp. 323-326
Authors:
KAWACHI G
GRAEFF CFO
BRANDT MS
STUTZMANN M
Citation: G. Kawachi et al., CARRIER TRANSPORT IN AMORPHOUS SILICON-BASED THIN-FILM TRANSISTORS STUDIED BY SPIN-DEPENDENT TRANSPORT, Physical review. B, Condensed matter, 54(11), 1996, pp. 7957-7964
Authors:
FISCHER T
PETROVAKOCH V
SHCHEGLOV K
BRANDT MS
KOCH F
Citation: T. Fischer et al., CONTINUOUSLY TUNABLE PHOTOLUMINESCENCE FROM SI-IMPLANTED AND THERMALLY ANNEALED SIO2-FILMS(), Thin solid films, 276(1-2), 1996, pp. 100-103
Authors:
GRAEFF CFO
KAWACHI G
BRANDT MS
STUTZMANN M
POWELL MJ
Citation: Cfo. Graeff et al., SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 200, 1996, pp. 1117-1120
Authors:
REINACHER NM
BRANDT MS
STUTZMANN M
Citation: Nm. Reinacher et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS OF GALLIUM-PHOSPHIDE GREEN LIGHT-EMITTING-DIODES, Journal of applied physics, 80(8), 1996, pp. 4541-4547
Authors:
STUTZMANN M
BRANDT MS
Citation: M. Stutzmann et Ms. Brandt, RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CANWE LEARN FROM SPIN-RESONANCE, Physica status solidi. b, Basic research, 190(1), 1995, pp. 97-106
Authors:
GRAEFF CFO
BRANDT MS
STUTZMANN M
POWELL MJ
Citation: Cfo. Graeff et al., DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS, Physical review. B, Condensed matter, 52(7), 1995, pp. 4680-4683
Authors:
BRANDT MS
STUTZMANN M
Citation: Ms. Brandt et M. Stutzmann, TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE, Solid state communications, 93(6), 1995, pp. 473-477
Authors:
STUTZMANN M
ROSSI MC
BRANDT MS
Citation: M. Stutzmann et al., PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON, Physical review. B, Condensed matter, 50(16), 1994, pp. 11592-11605
Authors:
BRANDT MS
AGER JW
GOTZ W
JOHNSON NM
HARRIS JS
MOLNAR RJ
MOUSTAKAS TD
Citation: Ms. Brandt et al., LOCAL VIBRATIONAL-MODES IN MG-DOPED GALLIUM NITRIDE, Physical review. B, Condensed matter, 49(20), 1994, pp. 14758-14761
Authors:
GRAEFF CFO
STUTZMANN M
BRANDT MS
Citation: Cfo. Graeff et al., SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS, Physical review. B, Condensed matter, 49(16), 1994, pp. 11028-11034
Authors:
BRANDT MS
STUTZMANN M
Citation: Ms. Brandt et M. Stutzmann, AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD, Journal of applied physics, 75(5), 1994, pp. 2507-2515
Authors:
FAN Y
HAN J
HE L
GUNSHOR RL
BRANDT MS
WALKER J
JOHNSON NM
NURMIKKO AV
Citation: Y. Fan et al., OBSERVATIONS ON THE LIMITS TO P-TYPE DOPING IN ZNSE, Applied physics letters, 65(8), 1994, pp. 1001-1003
Authors:
BRANDT MS
JOHNSON NM
MOLNAR RJ
SINGH R
MOUSTAKAS TD
Citation: Ms. Brandt et al., HYDROGENATION OF P-TYPE GALLIUM NITRIDE, Applied physics letters, 64(17), 1994, pp. 2264-2266