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Results: 1-25 | 26-34
Results: 1-25/34
LOCALIZED INTERFACE STATES AND THE OPTICAL-SPECTRA OF ALSB INAS HETEROSTRUCTURES/
Authors: SHAW MJ GOPIR G BRIDDON PR JAROS M
Citation: Mj. Shaw et al., LOCALIZED INTERFACE STATES AND THE OPTICAL-SPECTRA OF ALSB INAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1794-1803
ELECTRONIC-STRUCTURE, IMPURITY BINDING-ENERGIES, ABSORPTION-SPECTRA OF INAS GAAS QUANTUM DOTS/
Authors: CUSACK MA BRIDDON PR JAROS M
Citation: Ma. Cusack et al., ELECTRONIC-STRUCTURE, IMPURITY BINDING-ENERGIES, ABSORPTION-SPECTRA OF INAS GAAS QUANTUM DOTS/, Physica. B, Condensed matter, 253(1-2), 1998, pp. 10-27
ELECTRONIC-PROPERTIES AND OPTICAL-SPECTRA OF INAS GAAS SELF-ASSEMBLEDQUANTUM DOTS/
Authors: CUSACK MA JAROS M BRIDDON PR
Citation: Ma. Cusack et al., ELECTRONIC-PROPERTIES AND OPTICAL-SPECTRA OF INAS GAAS SELF-ASSEMBLEDQUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 91-98
IDENTIFICATION OF THE HYDROGEN-SATURATED SELF-INTERSTITIALS IN SILICON AND GERMANIUM
Authors: BUDDE M NIELSEN BB LEARY P GOSS J JONES R BRIDDON PR OBERG S BREUER SJ
Citation: M. Budde et al., IDENTIFICATION OF THE HYDROGEN-SATURATED SELF-INTERSTITIALS IN SILICON AND GERMANIUM, Physical review. B, Condensed matter, 57(8), 1998, pp. 4397-4412
QUANTITATIVE DENSITY-FUNCTIONAL STUDY OF NESTED FULLERENES
Authors: HEGGIE MI TERRONES M EGGEN BR JUNGNICKEL G JONES R LATHAM CD BRIDDON PR TERRONES H
Citation: Mi. Heggie et al., QUANTITATIVE DENSITY-FUNCTIONAL STUDY OF NESTED FULLERENES, Physical review. B, Condensed matter, 57(21), 1998, pp. 13339-13342
HYDROGEN MOLECULES IN SILICON LOCATED AT INTERSTITIAL SITES AND TRAPPED IN VOIDS
Authors: HOURAHINE B JONES R OBERG S NEWMAN RC BRIDDON PR RODUNER E
Citation: B. Hourahine et al., HYDROGEN MOLECULES IN SILICON LOCATED AT INTERSTITIAL SITES AND TRAPPED IN VOIDS, Physical review. B, Condensed matter, 57(20), 1998, pp. 12666-12669
FIRST STAGE OF OXYGEN AGGREGATION IN SILICON - THE OXYGEN DIMER
Authors: OBERG S EWELS CP JONES R HALLBERG T LINDSTROM JL MURIN LI BRIDDON PR
Citation: S. Oberg et al., FIRST STAGE OF OXYGEN AGGREGATION IN SILICON - THE OXYGEN DIMER, Physical review letters, 81(14), 1998, pp. 2930-2933
CARBON-ATOMS CATALYZE FULLERENE GROWTH
Authors: EGGEN BR HEGGIE MI JUNGNICKEL G LATHAM CD JONES R BRIDDON PR
Citation: Br. Eggen et al., CARBON-ATOMS CATALYZE FULLERENE GROWTH, Fullerene science and technology, 5(4), 1997, pp. 727-745
ABSORPTION-SPECTRA AND OPTICAL-TRANSITIONS IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/
Authors: CUSACK MA BRIDDON PR JAROS M
Citation: Ma. Cusack et al., ABSORPTION-SPECTRA AND OPTICAL-TRANSITIONS IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 56(7), 1997, pp. 4047-4050
N2 AND N4 OPTICAL-TRANSITIONS IN DIAMOND - A BREAKDOWN OF THE VACANCYMODEL
Authors: JONES R GOSS JP BRIDDON PR OBERG S
Citation: R. Jones et al., N2 AND N4 OPTICAL-TRANSITIONS IN DIAMOND - A BREAKDOWN OF THE VACANCYMODEL, Physical review. B, Condensed matter, 56(4), 1997, pp. 1654-1656
COMMENT ON ELECTRONIC-STRUCTURE OF THE N-V CENTER IN DIAMOND - THEORY
Authors: GOSS JP JONES R BRIDDON PR DAVIES G COLLINS AT MAINWOOD A VANWYK JA BAKER JM NEWTON ME STONEHAM AM LAWSON SC
Citation: Jp. Goss et al., COMMENT ON ELECTRONIC-STRUCTURE OF THE N-V CENTER IN DIAMOND - THEORY, Physical review. B, Condensed matter, 56(24), 1997, pp. 16031-16032
(C-AS)(2)-HYDROGEN DEFECTS IN GAAS - A FIRST-PRINCIPLES STUDY
Authors: GOSS JP JONES R OBERG S BRIDDON PR
Citation: Jp. Goss et al., (C-AS)(2)-HYDROGEN DEFECTS IN GAAS - A FIRST-PRINCIPLES STUDY, Physical review. B, Condensed matter, 55(23), 1997, pp. 15576-15580
NOVEL MICROSCOPIC PROPERTIES AND THE ELECTRONIC-STRUCTURE OF SIGE HETEROSTRUCTURES AND RELATED SYSTEMS
Authors: SHAW MJ BRIDDON PR JAROS M
Citation: Mj. Shaw et al., NOVEL MICROSCOPIC PROPERTIES AND THE ELECTRONIC-STRUCTURE OF SIGE HETEROSTRUCTURES AND RELATED SYSTEMS, Thin solid films, 294(1-2), 1997, pp. 166-172
THEORY OF THREADING EDGE AND SCREW DISLOCATIONS IN GAN
Authors: ELSNER J JONES R SITCH PK POREZAG VD ELSTNER M FRAUENHEIM T HEGGIE MI OBERG S BRIDDON PR
Citation: J. Elsner et al., THEORY OF THREADING EDGE AND SCREW DISLOCATIONS IN GAN, Physical review letters, 79(19), 1997, pp. 3672-3675
ENERGETICS OF FULLERENE ISOMER TRANSFORMATION
Authors: EGGEN BR LATHAM CD HEGGIE MI JONES B BRIDDON PR
Citation: Br. Eggen et al., ENERGETICS OF FULLERENE ISOMER TRANSFORMATION, Synthetic metals, 77(1-3), 1996, pp. 165-168
VACANCY-H AND ACCEPTOR-H COMPLEXES IN INP
Authors: EWELS CP OBERG S JONES R PAJOT B BRIDDON PR
Citation: Cp. Ewels et al., VACANCY-H AND ACCEPTOR-H COMPLEXES IN INP, Semiconductor science and technology, 11(4), 1996, pp. 502-507
ELECTRONIC-STRUCTURE OF INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/
Authors: CUSACK MA BRIDDON PR JAROS M
Citation: Ma. Cusack et al., ELECTRONIC-STRUCTURE OF INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 54(4), 1996, pp. 2300-2303
ELECTRONIC-STRUCTURE OF IMPERFECT SI GE HETEROSTRUCTURES/
Authors: SHAW MJ BRIDDON PR JAROS M
Citation: Mj. Shaw et al., ELECTRONIC-STRUCTURE OF IMPERFECT SI GE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 54(23), 1996, pp. 16781-16785
INTERSTITIAL HYDROGEN AND ENHANCED DISSOCIATION OF C-H COMPLEXES IN GAAS
Authors: BREUER SJ JONES R BRIDDON PR OBERG S
Citation: Sj. Breuer et al., INTERSTITIAL HYDROGEN AND ENHANCED DISSOCIATION OF C-H COMPLEXES IN GAAS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16289-16296
ENERGY BARRIER TO REORIENTATION OF THE SUBSTITUTIONAL NITROGEN IN DIAMOND
Authors: BREUER SJ BRIDDON PR
Citation: Sj. Breuer et Pr. Briddon, ENERGY BARRIER TO REORIENTATION OF THE SUBSTITUTIONAL NITROGEN IN DIAMOND, Physical review. B, Condensed matter, 53(12), 1996, pp. 7819-7822
AUTOCATALYSIS DURING FULLERENE GROWTH
Authors: EGGEN BR HEGGIE MI JUNGNICKEL G LATHAM CD JONES R BRIDDON PR
Citation: Br. Eggen et al., AUTOCATALYSIS DURING FULLERENE GROWTH, Science, 272(5258), 1996, pp. 87-89
THE 12-LINE 1.682EV LUMINESCENCE CENTER IN DIAMOND AND THE VACANCY-SILICON COMPLEX
Authors: GOSS JP JONES R BREUER SJ BRIDDON PR OBERG S
Citation: Jp. Goss et al., THE 12-LINE 1.682EV LUMINESCENCE CENTER IN DIAMOND AND THE VACANCY-SILICON COMPLEX, Physical review letters, 77(14), 1996, pp. 3041-3044
THE BONDING OF C-AS ACCEPTORS IN INXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY USING CARBON TETRABROMIDE AS THE SOURCE OF CARBON
Authors: ASHWIN MJ PRITCHARD RE NEWMAN RC JOYCE TB BULLOUGH TJ WAGNER J JEYNES C BREUER SJ JONES R BRIDDON PR OBERG S
Citation: Mj. Ashwin et al., THE BONDING OF C-AS ACCEPTORS IN INXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY USING CARBON TETRABROMIDE AS THE SOURCE OF CARBON, Journal of applied physics, 80(12), 1996, pp. 6754-6760
VIBRONIC COUPLING-CONSTANTS IN BEDT-TTF AND C-60
Authors: FAULHABER JCR KO DYK BRIDDON PR
Citation: Jcr. Faulhaber et al., VIBRONIC COUPLING-CONSTANTS IN BEDT-TTF AND C-60, Journal of superconductivity, 8(1), 1995, pp. 17-20
INTERFACE-INDUCED LOCALIZATION IN ALSB INAS HETEROSTRUCTURES/
Authors: SHAW MJ BRIDDON PR JAROS M
Citation: Mj. Shaw et al., INTERFACE-INDUCED LOCALIZATION IN ALSB INAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 52(23), 1995, pp. 16341-16344
Risultati: 1-25 | 26-34