Authors: BRINKMANN RP FURST R WERNER C HIERLEMANN M

Citation: Rp. Brinkmann et al., A REDUCED-FLUID DYNAMIC DISCHARGE MODEL FOR APPLICATIONS IN TECHNOLOGY-ORIENTED COMPUTER-AIDED-DESIGN, Journal of the Electrochemical Society, 143(6), 1996, pp. 1940-1944

Authors: ZHENG J BRINKMANN RP MCVITTIE JP

Citation: J. Zheng et al., THE EFFECT OF THE PRESHEATH ON THE ION ANGULAR-DISTRIBUTION AT THE WAFER SURFACE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 859-864

Authors: KENNEDY MK BRINKMANN RP SCHOENBACH KH

Citation: Mk. Kennedy et al., INFLUENCE OF CONTACTS ON THE HOLD-OFF VOLTAGE AND RECOVERY OF ELECTRON-BEAM ACTIVATED GALLIUM-ARSENIDE SWITCHES, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 1009-1011

Authors: STOUDT DC BRINKMANN RP ROUSH RA MAZZOLA MS ZUTAVERN FJ LOUBRIEL GM

Citation: Dc. Stoudt et al., EFFECTS OF 1-MEV NEUTRON-IRRADIATION ON THE OPERATION OF A BISTABLE OPTICALLY CONTROLLED SEMICONDUCTOR SWITCH (BOSS), I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 913-919