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Results: 1-10 |
Results: 10

Authors: ARMSTRONG GA UPPAL S BROTHERTON SD AYRES JR
Citation: Ga. Armstrong et al., DIFFERENTIATION OF EFFECTS DUE TO GRAIN AND GRAIN-BOUNDARY TRAPS IN LASER ANNEALED POLY-SI THIN-FILM TRANSISTORS, JPN J A P 1, 37(4A), 1998, pp. 1721-1726

Authors: AYRES JR BROTHERTON SD MCCULLOCH DJ TRAINOR MJ
Citation: Jr. Ayres et al., ANALYSIS OF DRAIN FIELD AND HOT-CARRIER STABILITY OF POLY-SI THIN-FILM TRANSISTORS, JPN J A P 1, 37(4A), 1998, pp. 1801-1808

Authors: ARMSTRONG GA UPPAL S BROTHERTON SD AYRES JR
Citation: Ga. Armstrong et al., MODELING OF LASER-ANNEALED POLYSILICON TFT CHARACTERISTICS, IEEE electron device letters, 18(7), 1997, pp. 315-318

Authors: ARMSTRONG GA AYRES JR BROTHERTON SD
Citation: Ga. Armstrong et al., NUMERICAL-SIMULATION OF TRANSIENT EMISSION FROM DEEP-LEVEL TRAPS IN POLYSILICON THIN-FILM TRANSISTORS, Solid-state electronics, 41(6), 1997, pp. 835-844

Authors: BROTHERTON SD MCCULLOCH DJ GOWERS JP AYRES JR TRAINOR MJ
Citation: Sd. Brotherton et al., INFLUENCE OF MELT DEPTH IN LASER CRYSTALLIZED POLY-SI THIN-FILM TRANSISTORS, Journal of applied physics, 82(8), 1997, pp. 4086-4094

Authors: ARMSTRONG GA BROTHERTON SD AYRES JR
Citation: Ga. Armstrong et al., A COMPARISON OF THE KINK EFFECT IN POLYSILICON THIN-FILM TRANSISTORS AND SILICON-ON-INSULATOR TRANSISTORS, Solid-state electronics, 39(9), 1996, pp. 1337-1346

Authors: BROTHERTON SD AYRES JR TRAINOR MJ
Citation: Sd. Brotherton et al., CONTROL AND ANALYSIS OF LEAKAGE CURRENTS IN POLY-SI THIN-FILM TRANSISTORS, Journal of applied physics, 79(2), 1996, pp. 895-904

Authors: BROTHERTON SD
Citation: Sd. Brotherton, POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Semiconductor science and technology, 10(6), 1995, pp. 721-738

Authors: MCCULLOCH DJ BROTHERTON SD
Citation: Dj. Mcculloch et Sd. Brotherton, SURFACE-ROUGHNESS EFFECTS IN LASER CRYSTALLIZED POLYCRYSTALLINE SILICON, Applied physics letters, 66(16), 1995, pp. 2060-2062

Authors: AYRES JR BROTHERTON SD CLARENCE IR DOBSON PJ
Citation: Jr. Ayres et al., PHOTOCURRENTS IN POLY-SI TFTS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 27-32
Risultati: 1-10 |