Authors:
ARMSTRONG GA
UPPAL S
BROTHERTON SD
AYRES JR
Citation: Ga. Armstrong et al., DIFFERENTIATION OF EFFECTS DUE TO GRAIN AND GRAIN-BOUNDARY TRAPS IN LASER ANNEALED POLY-SI THIN-FILM TRANSISTORS, JPN J A P 1, 37(4A), 1998, pp. 1721-1726
Authors:
AYRES JR
BROTHERTON SD
MCCULLOCH DJ
TRAINOR MJ
Citation: Jr. Ayres et al., ANALYSIS OF DRAIN FIELD AND HOT-CARRIER STABILITY OF POLY-SI THIN-FILM TRANSISTORS, JPN J A P 1, 37(4A), 1998, pp. 1801-1808
Citation: Ga. Armstrong et al., NUMERICAL-SIMULATION OF TRANSIENT EMISSION FROM DEEP-LEVEL TRAPS IN POLYSILICON THIN-FILM TRANSISTORS, Solid-state electronics, 41(6), 1997, pp. 835-844
Authors:
BROTHERTON SD
MCCULLOCH DJ
GOWERS JP
AYRES JR
TRAINOR MJ
Citation: Sd. Brotherton et al., INFLUENCE OF MELT DEPTH IN LASER CRYSTALLIZED POLY-SI THIN-FILM TRANSISTORS, Journal of applied physics, 82(8), 1997, pp. 4086-4094
Citation: Ga. Armstrong et al., A COMPARISON OF THE KINK EFFECT IN POLYSILICON THIN-FILM TRANSISTORS AND SILICON-ON-INSULATOR TRANSISTORS, Solid-state electronics, 39(9), 1996, pp. 1337-1346
Citation: Sd. Brotherton et al., CONTROL AND ANALYSIS OF LEAKAGE CURRENTS IN POLY-SI THIN-FILM TRANSISTORS, Journal of applied physics, 79(2), 1996, pp. 895-904