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Results:
1-8
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Results: 8
Authors:
RANDRIAMORA F
BRUYERE JC
DENEUVILLE A
Citation: F. Randriamora et al., SYNTHESIS OF ALN BY REACTIVE SPUTTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 272-276
Authors:
FONTAINE F
DENEUVILLE A
LUCAZEAU E
GHEERAERT E
SAVALL C
BRUYERE JC
Citation: F. Fontaine et al., ANNEALING OF DIAMOND ABOVE 800-DEGREES-C - NEED FOR AND RESULTS OF SI3N4 ENCAPSULATION, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 596-599
Authors:
FABRY P
SIEBERT E
BRUYERE JC
MURET P
Citation: P. Fabry et al., USE OF AMORPHOUS-SILICON THIN-LAYERS AS AN ELECTRICAL TRANSDUCER IN AN ION ELECTROCHEMICAL SENSOR, Sensors and actuators. B, Chemical, 27(1-3), 1995, pp. 407-410
Authors:
SAVALL C
BRUYERE JC
STOQUERT JP
Citation: C. Savall et al., CHEMICAL-BONDS AND MICROSTRUCTURE IN NEARLY STOICHIOMETRIC PECVD ASI(X)N(Y)H(Z), Thin solid films, 260(2), 1995, pp. 174-180
Authors:
SAVALL C
BRUYERE JC
Citation: C. Savall et Jc. Bruyere, HYDROGEN AND DEUTERIUM MIGRATION IN ANNEALED PLASMA-DEPOSITED SILICON-NITRIDE FILMS, Thin solid films, 258(1-2), 1995, pp. 1-4
Authors:
SAVALL C
BRUYERE JC
KRAUTWURM J
Citation: C. Savall et al., CORRELATIONS BETWEEN ESR AND PHOTOLUMINESCENCE IN SLIGHTLY HYDROGENATED SILICON-NITRIDE, Journal of physics. D, Applied physics, 28(3), 1995, pp. 565-570
Authors:
ROBERT JL
BRUYERE JC
PINARD P
Citation: Jl. Robert et al., SILICON, A BASIC MATERIAL FOR MICROTECHNO LOGIES, Onde electrique, 74(2), 1994, pp. 10-13
Authors:
BRUYERE JC
SAVALL C
REYNES B
BRUNEL M
ORTEGA L
Citation: Jc. Bruyere et al., DENSITY OF AS-DEPOSITED AND ANNEALED THIN SILICON-NITRIDE FILMS, Journal of physics. D, Applied physics, 26(4), 1993, pp. 713-716
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1-8
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