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Results: 1-14 |
Results: 14
DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS
Authors: DEWAMES RE EDWALL DD ZANDIAN M BUBULAC LO PASKO JG TENNANT WE ARIAS JM DSOUZA A
Citation: Re. Dewames et al., DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 722-726
HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS
Authors: BUBULAC LO TENNANT WE PASKO JG KOZLOWSKI LJ ZANDIAN M MOTAMEDI ME DEWAMES RE BAJAJ J NAYAR N MCLEVIGE WV GLUCK NS MELENDES R COOPER DE EDWALL DD ARIAS JM HALL R DSOUZA AI
Citation: Lo. Bubulac et al., HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS, Journal of electronic materials, 26(6), 1997, pp. 649-655
VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS
Authors: DSOUZA AI DAWSON LC ANDERSON EJ MARKUM AD TENNANT WE BUBULAC LO ZANDIAN M PASKO JG MCLEVIGE WV EDWALL DD DERR JW JANDIK JE
Citation: Ai. Dsouza et al., VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS, Journal of electronic materials, 26(6), 1997, pp. 656-661
CHARACTERISTICS AND UNIFORMITY OF GROUP-V IMPLANTED AND ANNEALED HGCDTE HETEROSTRUCTURE
Authors: BUBULAC LO BAJAJ J TENNANT WE ZANDIAN M PASKO J MCLEVIGE WV
Citation: Lo. Bubulac et al., CHARACTERISTICS AND UNIFORMITY OF GROUP-V IMPLANTED AND ANNEALED HGCDTE HETEROSTRUCTURE, Journal of electronic materials, 25(8), 1996, pp. 1312-1317
UNIFORM LOW DEFECT DENSITY MOLECULAR-BEAM EPITAXIAL HGCDTE
Authors: BAJAJ J ARIAS JM ZANDIAN M EDWALL DD PASKO JG BUBULAC LO KOZLOWSKI LJ
Citation: J. Bajaj et al., UNIFORM LOW DEFECT DENSITY MOLECULAR-BEAM EPITAXIAL HGCDTE, Journal of electronic materials, 25(8), 1996, pp. 1394-1401
CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION
Authors: BUBULAC LO TENNANT WE BAJAJ J SHENG J BRIGHAM R VANDERWYCK AHB ZANDIAN M MCLEVIGE WV
Citation: Lo. Bubulac et al., CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION, Journal of electronic materials, 24(9), 1995, pp. 1175-1182
ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY
Authors: ZANDIAN M ARIAS JM BAJAJ J PASKO JG BUBULAC LO DEWAMES RE
Citation: M. Zandian et al., ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(9), 1995, pp. 1207-1210
MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES
Authors: ARIAS JM ZANDIAN M BAJAJ J PASKO JG BUBULAC LO SHIN SH DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 521-524
ENHANCED ARSENIC DIFFUSION AND ACTIVATION IN HGCDTE
Authors: SHIN SH ARIAS JM ZANDIAN M PASKO JG BUBULAC LO DEWAMES RE
Citation: Sh. Shin et al., ENHANCED ARSENIC DIFFUSION AND ACTIVATION IN HGCDTE, Journal of electronic materials, 24(5), 1995, pp. 609-615
P-TYPE DOPING OF DOUBLE-LAYER MERCURY CADMIUM TELLURIDE FOR JUNCTION FORMATION
Authors: BUBULAC LO EDWALL DD IRVINE SJC GERTNER ER SHIN SH
Citation: Lo. Bubulac et al., P-TYPE DOPING OF DOUBLE-LAYER MERCURY CADMIUM TELLURIDE FOR JUNCTION FORMATION, Journal of electronic materials, 24(5), 1995, pp. 617-624
A NEW N-TYPE DOPING PRECURSOR FOR MOCVD-IMP GROWTH OF DETECTOR QUALITY MCT
Authors: IRVINE SJC BAJAJ J BUBULAC LO LIN WP GEDRIDGE RW HIGA KT
Citation: Sjc. Irvine et al., A NEW N-TYPE DOPING PRECURSOR FOR MOCVD-IMP GROWTH OF DETECTOR QUALITY MCT, Journal of electronic materials, 22(8), 1993, pp. 859-864
CHARACTERIZATION OF HG1-XCDXTE HETEROSTRUCTURES BY THERMOELECTRIC MEASUREMENTS
Authors: BAARS J BRINK D EDWALL DD BUBULAC LO
Citation: J. Baars et al., CHARACTERIZATION OF HG1-XCDXTE HETEROSTRUCTURES BY THERMOELECTRIC MEASUREMENTS, Journal of electronic materials, 22(8), 1993, pp. 923-929
ANNEALING EFFECT ON THE P-TYPE CARRIER CONCENTRATION IN LOW-TEMPERATURE PROCESSED ARSENIC-DOPED HGCDTE
Authors: SHIN SH ARIAS JM ZANDIAN M PASKO JG BUBULAC LO DEWAMES RE
Citation: Sh. Shin et al., ANNEALING EFFECT ON THE P-TYPE CARRIER CONCENTRATION IN LOW-TEMPERATURE PROCESSED ARSENIC-DOPED HGCDTE, Journal of electronic materials, 22(8), 1993, pp. 1039-1047
MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES
Authors: ARIAS JM PASKO JG ZANDIAN M SHIN SH WILLIAMS GM BUBULAC LO DEWAMES RE TENNANT WE
Citation: Jm. Arias et al., MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 1049-1053
Risultati: 1-14 |