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Results: 1-9 |
Results: 9
ULTRA-WIDE-BAND SOURCE USING GALLIUM-ARSENIDE PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
Authors: SCHOENBERG JSH BURGER JW TYO JS ABDALLA MD SKIPPER MC BUCHWALD WR
Citation: Jsh. Schoenberg et al., ULTRA-WIDE-BAND SOURCE USING GALLIUM-ARSENIDE PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES, IEEE transactions on plasma science, 25(2), 1997, pp. 327-334
A COMPARISON OF PNPN AND OXYGEN-DOPED PN-I-PN GAAS THYRISTORS
Authors: BUCHWALD WR JONES KA ZHAO JH HUANG JW KUECH TF
Citation: Wr. Buchwald et al., A COMPARISON OF PNPN AND OXYGEN-DOPED PN-I-PN GAAS THYRISTORS, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1154-1157
A HIGH-CURRENT AND HIGH-TEMPERATURE 6H-SIC THYRISTOR
Authors: XIE K ZHAO JH FLEMISH JR BURKE T BUCHWALD WR LORENZO G SINGH H
Citation: K. Xie et al., A HIGH-CURRENT AND HIGH-TEMPERATURE 6H-SIC THYRISTOR, IEEE electron device letters, 17(3), 1996, pp. 142-144
LOW DAMAGE AND RESIDUE-FREE DRY-ETCHING OF 6H-SIC USING ELECTRON-CYCLOTRON-RESONANCE PLASMA
Authors: XIE K FLEMISH JR ZHAO JH BUCHWALD WR CASAS L
Citation: K. Xie et al., LOW DAMAGE AND RESIDUE-FREE DRY-ETCHING OF 6H-SIC USING ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 67(3), 1995, pp. 368-370
MAGNETRON ENHANCED REACTIVE ION ETCHING OF GAAS IN CH4 H2/AR - SURFACE DAMAGE STUDY/
Authors: MCLANE GF BUCHWALD WR CASAS L COLE MW
Citation: Gf. Mclane et al., MAGNETRON ENHANCED REACTIVE ION ETCHING OF GAAS IN CH4 H2/AR - SURFACE DAMAGE STUDY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1356-1359
AN LPE GROWN INP BASED OPTOTHYRISTOR FOR POWER SWITCHING APPLICATIONS
Authors: LIS RJ ZHAO JH ZHU LD ILLAN J MCAFEE S BURKE T WEINER M BUCHWALD WR JONES KA
Citation: Rj. Lis et al., AN LPE GROWN INP BASED OPTOTHYRISTOR FOR POWER SWITCHING APPLICATIONS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 809-813
A 3-TERMINAL INP INGAASP OPTOELECTRONIC THYRISTOR/
Authors: BUCHWALD WR ZHAO JH ZHU LD SCHAUER S JONES KA
Citation: Wr. Buchwald et al., A 3-TERMINAL INP INGAASP OPTOELECTRONIC THYRISTOR/, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 620-622
ELECTRICALLY-DETECTED MAGNETIC-RESONANCE NEAR THE P-DOPED N-DOPED INTERFACE OF SI JUNCTION DIODES
Authors: POINDEXTER EH RONG FC BUCHWALD WR GERARDI GJ KEEBLE DJ WARREN WL
Citation: Eh. Poindexter et al., ELECTRICALLY-DETECTED MAGNETIC-RESONANCE NEAR THE P-DOPED N-DOPED INTERFACE OF SI JUNCTION DIODES, Colloids and surfaces. A, Physicochemical and engineering aspects, 72, 1993, pp. 119-125
ELECTRON AND HOLE TRAPS IN HEAVILY COMPENSATED INGAAS GAAS HETEROSTRUCTURES/
Authors: BUCHWALD WR ZHAO JH HARMATZ M POINDEXTER EH
Citation: Wr. Buchwald et al., ELECTRON AND HOLE TRAPS IN HEAVILY COMPENSATED INGAAS GAAS HETEROSTRUCTURES/, Solid-state electronics, 36(7), 1993, pp. 1077-1082
Risultati: 1-9 |