Authors:
BUKHARAEV AA
BUKHARAEVA AA
NURGAZIZOV NI
OVCHINNIKOV DV
Citation: Aa. Bukharaev et al., IN-SITU EXAMINATION OF THE CHEMICAL ETCHING OF SIO2-SI STRUCTURES USING AN ATOMIC-FORCE MICROSCOPE, Technical physics letters, 24(11), 1998, pp. 863-865
Authors:
BUKHARAEV AA
OVCHINNIKOV DV
NURGAZIZOV NI
KUKOVITSKII EF
KLAIBER M
WIESENDANGER R
Citation: Aa. Bukharaev et al., INVESTIGATION OF MICROMAGNETISM AND MAGNETIC REVERSAL OF NI NANOPARTICLES USING A MAGNETIC FORCE MICROSCOPE, Physics of the solid state, 40(7), 1998, pp. 1163-1168
Authors:
BUKHARAEV AA
KUKOVITSKII EF
OVCHINNIKOV DV
SAINOV NA
NURGAZIZOV NI
Citation: Aa. Bukharaev et al., SCANNING FORCE MICROSCOPY OF CATALYTIC NICKEL PARTICLES PREPARED FROMCARBON NANOTUBES, Physics of the solid state, 39(11), 1997, pp. 1846-1851
Authors:
BUKHARAEV AA
JANDUGANOV VM
SAMARSKY EA
BERDUNOV NV
Citation: Aa. Bukharaev et al., ATOMIC-FORCE MICROSCOPY OF LASER-INDUCED SUBMICROMETER PERIODIC STRUCTURES ON IMPLANTED FUSED-SILICA AND SILICON, Applied surface science, 103(1), 1996, pp. 49-54
Citation: Aa. Bukharaev, SCANNING TUNNELING AND ATOMIC-FORCE MICRO SCOPY STUDIES OF SURFACES MODIFIED BY ION AND LASER-BEAMS, Uspehi fiziceskih nauk, 166(2), 1996, pp. 210-213
Authors:
BUKHARAEV AA
SAMARSKY EA
JANDUGANOV VM
BERDUNOV NV
ANTONOV PG
Citation: Aa. Bukharaev et al., EFFECTS OF STIMULATED ADSORPTION IN SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF SI SURFACE IN AMBIENT AIR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1274-1279
Authors:
BUKHARAEV AA
LOBKOV VS
YANDUGANOV VM
SAMARSKII EA
BERDUNOV NV
Citation: Aa. Bukharaev et al., ATOMIC-FORCE MICROSCOPY OF SUBMICRON STRU CTURES FORMED BY IONIC AND LASER-BEAMS, Pis'ma v Zurnal tehniceskoj fiziki, 21(15), 1995, pp. 72-77
Authors:
BUKHARAEV AA
LOBKOV VS
YANDUGANOV VM
SAMARSKII EA
BERDUNOV NV
Citation: Aa. Bukharaev et al., SCANNING PROBE MICROSCOPY OF DIFFRACTION GRATINGS INDUCED BY LASER-RADIATION, Optika i spektroskopia, 79(3), 1995, pp. 417-425
Authors:
GALAKHOV VR
KURMAEV EZ
SHAMIN SN
ELOKHINA LV
YARMOSHENKO YM
BUKHARAEV AA
Citation: Vr. Galakhov et al., ANALYSIS OF THE DEPTH PROFILE OF FE-SI BURIED LAYERS IN FE-IMPLANTED SI WAFER BY SOFT-X-RAY EMISSION-SPECTROSCOPY(), Applied surface science, 72(1), 1993, pp. 73-77