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Results: 1-25 | 26-28
Results: 1-25/28
A COMPARISON OF THE TRANSITORY PERIODS IN GAAS AND ALGAAS CBE GROWTH
Authors: HILL D FARRELL T JOYCE TB BULLOUGH TJ
Citation: D. Hill et al., A COMPARISON OF THE TRANSITORY PERIODS IN GAAS AND ALGAAS CBE GROWTH, Journal of crystal growth, 188(1-4), 1998, pp. 21-25
SPUTTERING AND THE FORMATION OF NANOMETER VOIDS AND HOLES IN ALUMINUMIN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE
Authors: BULLOUGH TJ
Citation: Tj. Bullough, SPUTTERING AND THE FORMATION OF NANOMETER VOIDS AND HOLES IN ALUMINUMIN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(1), 1997, pp. 69-85
DI-CARBON DEFECTS IN ANNEALED HIGHLY CARBON-DOPED GAAS
Authors: WAGNER J NEWMAN RC DAVIDSON BR WESTWATER SP BULLOUGH TJ JOYCE TB LATHAM CD JONES R OBERG S
Citation: J. Wagner et al., DI-CARBON DEFECTS IN ANNEALED HIGHLY CARBON-DOPED GAAS, Physical review letters, 78(1), 1997, pp. 74-77
TRANSIENT SURFACE-STATES DURING THE CBE GROWTH OF GAAS
Authors: FARRELL T HILL D JOYCE TB BULLOUGH TJ WEIGHTMAN P
Citation: T. Farrell et al., TRANSIENT SURFACE-STATES DURING THE CBE GROWTH OF GAAS, Journal of crystal growth, 175, 1997, pp. 1217-1222
CARBON DELTA-DOPING IN CHEMICAL BEAM EPITAXY USING CBR4
Authors: JOYCE TB BULLOUGH TJ FARRELL T DAVIDSON BR SYKES DE CHEW A
Citation: Tb. Joyce et al., CARBON DELTA-DOPING IN CHEMICAL BEAM EPITAXY USING CBR4, Journal of crystal growth, 175, 1997, pp. 377-382
THE MICROSTRUCTURE AND THERMAL-STABILITY OF CBE GROWN HEAVILY CARBON-DOPED GAAS
Authors: WESTWATER SP BULLOUGH TJ
Citation: Sp. Westwater et Tj. Bullough, THE MICROSTRUCTURE AND THERMAL-STABILITY OF CBE GROWN HEAVILY CARBON-DOPED GAAS, Journal of crystal growth, 170(1-4), 1997, pp. 752-756
THE SUPPRESSION OF MISFIT DISLOCATION INTRODUCTION IN HEAVILY CARBON-DOPED GAAS
Authors: WESTWATER SP BULLOUGH TJ JOYCE TB DAVIDSON BR HART L
Citation: Sp. Westwater et al., THE SUPPRESSION OF MISFIT DISLOCATION INTRODUCTION IN HEAVILY CARBON-DOPED GAAS, Applied physics letters, 70(1), 1997, pp. 60-62
CARBON DELTA-DOPING GAAS SUPERLATTICES
Authors: DAVIDSON BR HART L NEWMAN RC JOYCE TB BULLOUGH TJ BUTTON CC
Citation: Br. Davidson et al., CARBON DELTA-DOPING GAAS SUPERLATTICES, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 355-360
A CALIBRATION OF THE H-C-AS STRETCH MODE IN GAAS
Authors: DAVIDSON BR NEWMAN RC JOYCE TB BULLOUGH TJ
Citation: Br. Davidson et al., A CALIBRATION OF THE H-C-AS STRETCH MODE IN GAAS, Semiconductor science and technology, 11(3), 1996, pp. 455-457
GROWTH MECHANISMS AND MORPHOLOGY OF AR-ASSISTED CBE OF GAAS( LASER)
Authors: BOYD AR BULLOUGH TJ FARRELL T JOYCE TB
Citation: Ar. Boyd et al., GROWTH MECHANISMS AND MORPHOLOGY OF AR-ASSISTED CBE OF GAAS( LASER), Journal of crystal growth, 164(1-4), 1996, pp. 71-76
CHARACTERIZATION OF CARBON DELTA-DOPING GAAS SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY USING CBR4
Authors: DAVIDSON BR HART L NEWMAN RC JOYCE TB BULLOUGH TJ
Citation: Br. Davidson et al., CHARACTERIZATION OF CARBON DELTA-DOPING GAAS SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY USING CBR4, Journal of crystal growth, 164(1-4), 1996, pp. 383-388
THE BONDING OF C-AS ACCEPTORS IN INXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY USING CARBON TETRABROMIDE AS THE SOURCE OF CARBON
Authors: ASHWIN MJ PRITCHARD RE NEWMAN RC JOYCE TB BULLOUGH TJ WAGNER J JEYNES C BREUER SJ JONES R BRIDDON PR OBERG S
Citation: Mj. Ashwin et al., THE BONDING OF C-AS ACCEPTORS IN INXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY USING CARBON TETRABROMIDE AS THE SOURCE OF CARBON, Journal of applied physics, 80(12), 1996, pp. 6754-6760
RAMAN-SPECTROSCOPIC STUDY OF THE H-C-AS COMPLEX IN EPITAXIAL ALAS
Authors: WAGNER J PRITCHARD RE DAVIDSON BR NEWMAN RC BULLOUGH TJ JOYCE TB BUTTON C ROBERTS JS
Citation: J. Wagner et al., RAMAN-SPECTROSCOPIC STUDY OF THE H-C-AS COMPLEX IN EPITAXIAL ALAS, Semiconductor science and technology, 10(5), 1995, pp. 639-644
DYNAMICS OF THE H-C-AS COMPLEX IN GAAS DETERMINED FROM RAMAN MEASUREMENTS
Authors: WAGNER J BACHEM KH DAVIDSON BR NEWMAN RC BULLOUGH TJ JOYCE TB
Citation: J. Wagner et al., DYNAMICS OF THE H-C-AS COMPLEX IN GAAS DETERMINED FROM RAMAN MEASUREMENTS, Physical review. B, Condensed matter, 51(7), 1995, pp. 4150-4158
THE USE OF DIETHYLSULFIDE FOR THE DOPING OF GAAS, ALCAAS AND INGAAS GROWN BY CHEMICAL BEAM EPITAXY
Authors: JOYCE TB PFEFFER TL BULLOUGH TJ PETKOS G GOODHEW PJ JONES AC
Citation: Tb. Joyce et al., THE USE OF DIETHYLSULFIDE FOR THE DOPING OF GAAS, ALCAAS AND INGAAS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 644-648
IN-SITU MONITORING OF CARBON-DOPED GAAS AND OF PERIODIC CARBON-DOPED GAAS ALAS STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/
Authors: JOYCE TB BULLOUGH TJ WESTWATER S
Citation: Tb. Joyce et al., IN-SITU MONITORING OF CARBON-DOPED GAAS AND OF PERIODIC CARBON-DOPED GAAS ALAS STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 146(1-4), 1995, pp. 394-398
THE USE OF DIETHYLSULFIDE FOR THE DOPING OF ALXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY
Authors: PFEFFER TL BULLOUGH TJ JOYCE TB JONES AC
Citation: Tl. Pfeffer et al., THE USE OF DIETHYLSULFIDE FOR THE DOPING OF ALXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 399-403
THE STRUCTURE AND VIBRATIONAL-MODES OF H-C(AS) PAIRS IN PASSIVATED ALAS GROWN BY CHEMICAL BEAM EPITAXY
Authors: PRITCHARD RE DAVIDSON BR NEWMAN RC BULLOUGH TJ JOYCE TB JONES R OBERG S
Citation: Re. Pritchard et al., THE STRUCTURE AND VIBRATIONAL-MODES OF H-C(AS) PAIRS IN PASSIVATED ALAS GROWN BY CHEMICAL BEAM EPITAXY, Semiconductor science and technology, 9(2), 1994, pp. 140-149
METALORGANIC SULFUR SOURCES FOR THE DOPING OF GAAS GROWN BY CHEMICAL BEAM EPITAXY
Authors: JOYCE TB PFEFFER T BULLOUGH TJ JONES AC
Citation: Tb. Joyce et al., METALORGANIC SULFUR SOURCES FOR THE DOPING OF GAAS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 31-35
OPTICAL MONITORING OF THE GROWTH OF HEAVILY-DOPED GAAS BY CHEMICAL BEAM EPITAXY AND OF THE IN-SITU ETCHING OF GAAS USING CBR4
Authors: JOYCE TB BULLOUGH TJ FARRELL T
Citation: Tb. Joyce et al., OPTICAL MONITORING OF THE GROWTH OF HEAVILY-DOPED GAAS BY CHEMICAL BEAM EPITAXY AND OF THE IN-SITU ETCHING OF GAAS USING CBR4, Applied physics letters, 65(17), 1994, pp. 2193-2195
USE OF A SILICON STRIP DOPING SOURCE IN CHEMICAL BEAM EPITAXY
Authors: JOYCE TB BULLOUGH TJ
Citation: Tb. Joyce et Tj. Bullough, USE OF A SILICON STRIP DOPING SOURCE IN CHEMICAL BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2865-2866
HYDROGEN WAG MODES AND TRANSVERSE CARBON MODES OF H-C(AS) COMPLEXES IN GAAS DOPED WITH C-12 OR C-13
Authors: DAVIDSON BR NEWMAN RC BULLOUGH TJ JOYCE TB
Citation: Br. Davidson et al., HYDROGEN WAG MODES AND TRANSVERSE CARBON MODES OF H-C(AS) COMPLEXES IN GAAS DOPED WITH C-12 OR C-13, Semiconductor science and technology, 8(9), 1993, pp. 1783-1785
MICROSTRUCTURE OF GAAS GROWN BY EXCIMER LASER-ASSISTED CHEMICAL BEAM EPITAXY
Authors: FARRELL T ARMSTRONG JV BEANLAND R BULLOUGH TJ JOYCE TB GOODHEW PJ
Citation: T. Farrell et al., MICROSTRUCTURE OF GAAS GROWN BY EXCIMER LASER-ASSISTED CHEMICAL BEAM EPITAXY, Semiconductor science and technology, 8(6), 1993, pp. 1112-1117
CARBON ACCEPTORS PASSIVATED WITH HYDROGEN AND THE SEARCH FOR CARBON DONORS IN HIGHLY DOPED GAAS C
Authors: ASHWIN MJ DAVIDSON BR WOODHOUSE K NEWMAN RC BULLOUGH TJ JOYCE TB NICKLIN R BRADLEY RR
Citation: Mj. Ashwin et al., CARBON ACCEPTORS PASSIVATED WITH HYDROGEN AND THE SEARCH FOR CARBON DONORS IN HIGHLY DOPED GAAS C, Semiconductor science and technology, 8(5), 1993, pp. 625-629
DYNAMICS OF THE H-C(AS) COMPLEX IN GAAS
Authors: DAVIDSON BR NEWMAN RC BULLOUGH TJ JOYCE TB
Citation: Br. Davidson et al., DYNAMICS OF THE H-C(AS) COMPLEX IN GAAS, Physical review. B, Condensed matter, 48(23), 1993, pp. 17106-17113
Risultati: 1-25 | 26-28