Authors: TITUS JL WHEATLEY CF ALLENSPACH M SCHRIMPF RD BURTON DI BREWS JR GALLOWAY KF PEASE RL

Citation: Jl. Titus et al., INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2938-2943

Authors: WHEATLEY CF TITUS JL BURTON DI CARLEY DR

Citation: Cf. Wheatley et al., SEGR RESPONSE OF A RADIATION-HARDENED POWER MOSFET TECHNOLOGY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2944-2951

Authors: TITUS JL WHEATLEY CF BURTON DI MOURET I ALLENSPACH M BREWS J SCHRIMPF R GALLOWAY K PEASE RL

Citation: Jl. Titus et al., IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1928-1934

Authors: WHEATLEY CF TITUS JL BURTON DI

Citation: Cf. Wheatley et al., SINGLE-EVENT GATE RUPTURE IN VERTICAL POWER MOSFETS - AN ORIGINAL EMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 41(6), 1994, pp. 2152-2159