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Results: 1-7 |
Results: 7

Authors: BUSHEHRI E THIEDE A STAROSELSKY V TIMOCHENKOV V LIENHART H BRATOV V JAKOBUS T
Citation: E. Bushehri et al., DUAL BRIDGE 6GSAMPLE S TRACK AND HOLD CIRCUIT IN ALGAAS/GAAS/ALGAAS HEMT TECHNOLOGY/, Electronics Letters, 34(10), 1998, pp. 934-936

Authors: BUSHEHRI E THIEDE A BRATOV V STAROSELSKY V RIEGERMOTZER M HUELSMANN A SCHLICHTER T RAYNOR B
Citation: E. Bushehri et al., DESIGN AND EVALUATION OF A NOVEL ENHANCEMENT-MODE FET LOGIC GATE CONFIGURATION IN ALGAAS GAAS/ALGAAS QUANTUM-WELL HEMT TECHNOLOGY/, IEE proceedings. Circuits, devices and systems, 144(4), 1997, pp. 243-246

Authors: THIEDE A BUSHEHRI E NOWOTNY U RIEGERMOTZER M SEDLER M BRONNER W HORNUNG J KAUFEL G RAYNOR B SCHNEIDER J
Citation: A. Thiede et al., SUBNANOSECOND ACCESS TIME 2K SINE-COSINE-ROM IN ALGAAS GAAS/ALGAAS QUANTUM-WELL HEMT TECHNOLOGY/, Electronics Letters, 33(5), 1997, pp. 428-429

Authors: JANKOVIC N BUSHEHRI E
Citation: N. Jankovic et E. Bushehri, DESIGN AND ANALYSIS OF A 0.6 V-OPERATING MERGED CMOS-BIPOLAR SRAM CELL, IEE proceedings. Circuits, devices and systems, 142(6), 1995, pp. 369-372

Authors: BUSHEHRI E BRATOV V THIEDE A STAROSELSKY V HEUSER O MALAMUD I
Citation: E. Bushehri et al., OPTIMIZATION OF HIGH-PERFORMANCE GATES IN ALGAAS GAAS QUANTUM-WELL TECHNOLOGY/, IEE proceedings. Circuits, devices and systems, 142(6), 1995, pp. 394-398

Authors: BUSHEHRI E BRATOV V THIEDE A STAROSELSKY V CLARK D
Citation: E. Bushehri et al., DESIGN AND ANALYSIS OF A LOW-POWER HEMT SRAM CELL, Electronics Letters, 31(21), 1995, pp. 1828-1829

Authors: JANKOVIC ND BUSHEHRI E
Citation: Nd. Jankovic et E. Bushehri, THEORETICAL AND EXPERIMENTAL EVALUATION OF HIGH-VOLTAGE CMOS INVERTERS, IEE proceedings. Circuits, devices and systems, 141(3), 1994, pp. 162-166
Risultati: 1-7 |