Citation: Va. Bykovsky et al., PHOTOLUMINESCENCE STUDY OF SHALLOW IMPURITIES LOCALIZATION IN TRANSMUTATION DOPED GAAS, Solid state communications, 93(5), 1995, pp. 459-459
Authors:
JUODKAZIS S
VANAGAS E
NETIKSIS V
PETRAUSKAS M
BYKOVSKY VA
UTENKO VI
HITKO VI
Citation: S. Juodkazis et al., MAPPING OF GAAS WAFERS BY IR LIGHT-DIFFRACTION AND LUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 448-451