Authors: BYSTROV SD TUAN L NOVIKOV SV SAVELEV IG

Citation: Sd. Bystrov et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS AND HETEROJUNCTION QUALITY IN INP IN1-XGAXAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/, Semiconductors, 28(2), 1994, pp. 180-182

Authors: BYSTROV SD KRESHCHUK AM LE TA NOVIKOV SV POLYANSKAYA TA SAVELEV IG SHIK AY

Citation: Sd. Bystrov et al., SHUBNIKOV-DEHASS OSCILLATIONS IN A NONUNIFORM 2D ELECTRON-GAS, Semiconductors, 28(1), 1994, pp. 55-59

Authors: BER BY BYSTROV SD ZUSHINSKII DA KORNYAKOVA OV TUAN L NOVIKOV SV SAVELEV IG TRETYAKOV VV CHALDYSHEV VV SHMARTSEV YV

Citation: By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820

Authors: BYSTROV SD KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG

Citation: Sd. Bystrov et al., QUANTUM AND CLASSICAL RELAXATION-TIMES AND PROPERTIES OF A HETEROJUNCTION IN SELECTIVELY DOPED INP IN0.53GA0.47AS HETEROSTRUCTURES/, Semiconductors, 27(4), 1993, pp. 358-362