AAAAAA
Results:
1-8
|
Results: 8
Authors:
Briseno, AL
Baca, A
Zhou, QZ
Lai, R
Zhou, FM
Citation: Al. Briseno et al., Quantification of dopant ions in polypyrrole films with electrochemical ICP-atomic emission spectrometry and comparison to electrochemical quartz crystal microbalance studies, ANALYT CHIM, 441(1), 2001, pp. 123-134
Authors:
Sims, J
Baca, A
Boebinger, G
Boenig, H
Coe, H
Kihara, K
Manzo, M
Mielke, C
Schillig, J
Eyssa, Y
Lesch, B
Li, L
Schneider-Muntau, H
Citation: J. Sims et al., First 100 T non-destructive magnet, IEEE APPL S, 10(1), 2000, pp. 510-513
Authors:
Bacon, J
Baca, A
Coe, H
Kihara, K
Manzo, M
Schillig, J
Sims, J
Eyssa, Y
Citation: J. Bacon et al., First 100 T non-destructive magnet outer coil set, IEEE APPL S, 10(1), 2000, pp. 514-517
Authors:
Han, K
Baca, A
Coe, H
Embury, J
Kihara, K
Lesch, B
Li, L
Schillig, J
Sims, J
Van Sciver, S
Schneider-Muntau, HJ
Citation: K. Han et al., Material issues in the 100 T non-destructive magnet, IEEE APPL S, 10(1), 2000, pp. 1277-1280
Authors:
Baca, A
Garcia-Recio, C
Nieves, J
Citation: A. Baca et al., Deeply bound levels in kaonic atoms, NUCL PHYS A, 673(1-4), 2000, pp. 335-353
Authors:
Baca, A
Citation: A. Baca, A comparison of methods for analyzing drop jump performance, MED SCI SPT, 31(3), 1999, pp. 437-442
Authors:
Ren, F
Pearton, SJ
Abernathy, CR
Baca, A
Cheng, P
Shul, RJ
Chu, SNG
Hong, M
Schurman, MJ
Lothian, JR
Citation: F. Ren et al., GaN metal oxide semiconductor field effect transistors, SOL ST ELEC, 43(9), 1999, pp. 1817-1820
Authors:
Ren, F
Hong, M
Chu, SNG
Marcus, MA
Schurman, MJ
Baca, A
Pearton, SJ
Abernathy, CR
Citation: F. Ren et al., Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 73(26), 1998, pp. 3893-3895
Risultati:
1-8
|