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Results:
1-16
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Results: 16
Authors:
Kondoh, E
Baklanov, MR
Lin, E
Gidley, D
Nakashima, A
Citation: E. Kondoh et al., Comparative study of pore size of low-dielectric-constant porous spin-on-glass films using different methods of nondestructive instrumentation, JPN J A P 2, 40(4A), 2001, pp. L323-L326
Authors:
Shamiryan, DG
Baklanov, MR
Vanhaelemeersch, S
Maex, K
Citation: Dg. Shamiryan et al., Controllable change of porosity of 3-methylsilane low-k dielectric film, EL SOLID ST, 4(1), 2001, pp. F3-F5
Authors:
Baklanov, MR
Shamiryan, DG
Tokei, Z
Beyer, GP
Conard, T
Vanhaelemeersch, S
Maex, K
Citation: Mr. Baklanov et al., Characterization of Cu surface cleaning by hydrogen plasma, J VAC SCI B, 19(4), 2001, pp. 1201-1211
Authors:
Kvon, ZD
Baturina, TI
Donaton, RA
Baklanov, MR
Maex, K
Olshanetsky, EB
Plotnikov, AE
Portal, JC
Citation: Zd. Kvon et al., Proximity effects and Andreev reflection in a mesoscopic SNS junction withperfect NS interfaces, PHYS REV B, 61(17), 2000, pp. 11340-11343
Authors:
Baklanov, MR
Van Hove, M
Mannaert, G
Vanhaelemeersch, S
Bender, H
Conard, T
Maex, K
Citation: Mr. Baklanov et al., Low temperature oxidation and selective etching of chemical vapor deposition a-SiC : H films, J VAC SCI B, 18(3), 2000, pp. 1281-1287
Authors:
Baklanov, MR
Mogilnikov, KP
Polovinkin, VG
Dultsev, FN
Citation: Mr. Baklanov et al., Determination of pore size distribution in thin films by ellipsometric porosimetry, J VAC SCI B, 18(3), 2000, pp. 1385-1391
Authors:
Baturina, TI
Kvon, ZD
Donaton, RA
Baklanov, MR
Olshanetsky, EB
Maex, K
Plotnikov, AE
Portal, JC
Citation: Ti. Baturina et al., Mesoscopic SNS junctions on the basis of superconducting PtSi films, PHYSICA B, 284, 2000, pp. 1860-1861
Authors:
Kvon, ZD
Baturina, TI
Donaton, RA
Baklanov, MR
Kostrikin, MN
Maex, K
Olshanetsky, EB
Portal, JC
Citation: Zd. Kvon et al., Maki-Thompson corrections in thin superconducting PtSi films nearby T-c, PHYSICA B, 284, 2000, pp. 959-960
Authors:
Baklanov, MR
Mogilnikov, KP
Citation: Mr. Baklanov et Kp. Mogilnikov, Characterization of porous dielectric films by ellipsometric porosimetry, OPT APPL, 30(4), 2000, pp. 491-496
Authors:
Kondoh, E
Baklanov, MR
Maex, K
Citation: E. Kondoh et al., Applications of in-line oxygen monitoring to a rapid thermal processing tool: diagnosing gas flow dynamics and silicidation processes, MAT SC S PR, 2(4), 1999, pp. 341-348
Authors:
Dultsev, FN
Baklanov, MR
Citation: Fn. Dultsev et Mr. Baklanov, Nondestructive determination of pore size distribution in thin films deposited on solid substrates, EL SOLID ST, 2(4), 1999, pp. 192-194
Authors:
Baklanov, MR
Muroyama, M
Judelewicz, M
Kondoh, E
Li, H
Waeterloos, J
Vanhaelemeersch, S
Maex, K
Citation: Mr. Baklanov et al., Process integration induced thermodesorption from SiO2/SiLK resin dielectric based interconnects, J VAC SCI B, 17(5), 1999, pp. 2136-2146
Authors:
Rajagopal, A
Gregoire, C
Lemaire, JJ
Pireaux, JJ
Baklanov, MR
Vanhaelemeersch, S
Maex, K
Waeterloos, JJ
Citation: A. Rajagopal et al., Surface characterization of a low dielectric constant polymer-SiLK polymer, and investigation of its interface with Cu, J VAC SCI B, 17(5), 1999, pp. 2336-2340
Authors:
Baklanov, MR
Vanhaelemeersch, S
Bender, H
Maex, K
Citation: Mr. Baklanov et al., Effects of oxygen and fluorine on the dry etch characteristics of organic low-kappa dielectrics, J VAC SCI B, 17(2), 1999, pp. 372-379
Authors:
Kim, YB
Baklanov, MR
Conard, T
de Potter, M
Vanhaeleemeersch, S
Citation: Yb. Kim et al., Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology, J ELCHEM SO, 146(4), 1999, pp. 1549-1556
Authors:
Kondoh, E
Baklanov, MR
Bender, H
Maex, K
Citation: E. Kondoh et al., Structural change in porous silica thin film after plasma treatment, EL SOLID ST, 1(5), 1998, pp. 224-226
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1-16
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