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Results: 1-7 |
Results: 7
Optimum design of very high-efficiency microwave power amplifiers based ontime-domain harmonic load-pull measurements
Authors: Barataud, D Campovecchio, M Nebus, JM
Citation: D. Barataud et al., Optimum design of very high-efficiency microwave power amplifiers based ontime-domain harmonic load-pull measurements, IEEE MICR T, 49(6), 2001, pp. 1107-1112
An active pulsed RF and pulsed DC load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems
Authors: Arnaud, C Barataud, D Nebus, JM Teyssier, JP Villotte, JP Floriot, D
Citation: C. Arnaud et al., An active pulsed RF and pulsed DC load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems, IEEE MICR T, 48(12), 2000, pp. 2625-2629
The use of artificial neural networks in nonlinear microwave devices and circuits modeling: An application to telecommunication system design (invited article)
Authors: Harkouss, Y Rousset, J Chehade, H Ngoya, E Barataud, D Teyssier, JP
Citation: Y. Harkouss et al., The use of artificial neural networks in nonlinear microwave devices and circuits modeling: An application to telecommunication system design (invited article), INT J RF MI, 9(3), 1999, pp. 198-215
Measurement and control of current/voltage waveforms of microwave transistors using a harmonic load-pull system for the optimum design of high efficiency power amplifiers
Authors: Barataud, D Blache, F Mallet, A Bouysse, PP Nebus, JM Villotte, JP Obregon, J Verspecht, J Auxemery, P
Citation: D. Barataud et al., Measurement and control of current/voltage waveforms of microwave transistors using a harmonic load-pull system for the optimum design of high efficiency power amplifiers, IEEE INSTR, 48(4), 1999, pp. 835-842
A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements
Authors: Siriex, D Noblanc, O Barataud, D Chartier, E Brylinski, C Quere, R
Citation: D. Siriex et al., A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements, IEEE DEVICE, 46(3), 1999, pp. 580-584
40-GHz/150-ns versatile pulsed measurement system for microwave transistorisothermal characterization
Authors: Teyssier, JP Bouysse, P Ouarch, Z Barataud, D Peyretaillade, T Quere, R
Citation: Jp. Teyssier et al., 40-GHz/150-ns versatile pulsed measurement system for microwave transistorisothermal characterization, IEEE MICR T, 46(12), 1998, pp. 2043-2052
Measurements of time-domain voltage/current waveforms at RF and microwave frequencies based on the use of a vector network analyzer for the characterization of nonlinear devices - Application to high-efficiency power amplifiers and frequency-multipliers optimization
Authors: Barataud, D Arnaud, C Thibaud, B Campovecchio, M Nebus, JM Villotte, JP
Citation: D. Barataud et al., Measurements of time-domain voltage/current waveforms at RF and microwave frequencies based on the use of a vector network analyzer for the characterization of nonlinear devices - Application to high-efficiency power amplifiers and frequency-multipliers optimization, IEEE INSTR, 47(5), 1998, pp. 1259-1264
Risultati: 1-7 |