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Results:
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Results: 18
Authors:
Oliviero, E
Beaufort, MF
Barbot, JF
Citation: E. Oliviero et al., Influence of dose rate on bubble formation by high energy He implantation in silicon, J APPL PHYS, 90(4), 2001, pp. 1718-1724
Authors:
Oliviero, E
Beaufort, MF
Barbot, JF
Citation: E. Oliviero et al., Dislocations induced by bubble formation in high energy He implantation insilicon, J APPL PHYS, 89(10), 2001, pp. 5332-5338
Authors:
Beaufort, MF
Oliviero, E
Garem, H
Godey, S
Ntsoenzok, E
Blanchard, C
Barbot, JF
Citation: Mf. Beaufort et al., Defects in silicon induced by high energy helium implantation and their evolution during anneals, PHIL MAG B, 80(11), 2000, pp. 1975-1985
Authors:
Godey, S
Ntsoenzok, E
Sauvage, T
van Veen, A
Labohm, F
Beaufort, MF
Barbot, JF
Citation: S. Godey et al., Helium desorption from cavities induced by high energy He-3 and He-4 implantation in silicon, MAT SCI E B, 73(1-3), 2000, pp. 54-59
Authors:
Schmidt, DC
Barbot, JF
Blanchard, C
Godey, S
Ntsoenzok, E
Svensson, BG
Citation: Dc. Schmidt et al., Proximity gettering of platinum in silicon following implantation with alpha particles at low doses, MAT SCI E B, 71, 2000, pp. 182-185
Authors:
Wartlick, BO
Blanchard, C
Barbot, JF
Citation: Bo. Wartlick et al., Study of silver and copper diffusion in p-type Hg(0.3)Cd(0.7)Teand CdTe bycapacitance measurements, MAT SCI E B, 71, 2000, pp. 254-257
Authors:
Barbot, JF
Blanchard, C
Demenet, JL
Citation: Jf. Barbot et al., Influence of dislocations on I-V characteristics of Schottky diodes prepared on n-type 6H-SiC, PHYS ST S-B, 222(1), 2000, pp. 159-167
Authors:
Godey, S
Sauvage, T
Ntsoenzok, E
Erramli, H
Beaufort, MF
Barbot, JF
Leroy, B
Citation: S. Godey et al., Cavities and dislocations induced in silicon by MeV He implantation, J APPL PHYS, 87(5), 2000, pp. 2158-2161
Authors:
Schmidt, DC
Aberg, D
Svensson, BG
Lindstrom, JL
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation, MAT SCI E B, 68(2), 1999, pp. 67-71
Authors:
Godey, S
Ntsoenzok, E
Schmidt, DC
Barbot, JF
Citation: S. Godey et al., Effect of shallow donors induced by hydrogen on P+N junctions, MAT SCI E B, 58(1-2), 1999, pp. 108-112
Authors:
Schmidt, DC
Svensson, BG
Lindstrom, JL
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Enhanced diffusion of platinum in electron-irradiated silicon, MAT SCI E B, 57(2), 1999, pp. 161-164
Authors:
Schmidt, DC
Svensson, BG
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum, NUCL INST B, 155(1-2), 1999, pp. 60-66
Authors:
Schmidt, DC
Svensson, BG
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C, NUCL INST B, 147(1-4), 1999, pp. 106-110
Authors:
Schmidt, DC
Svensson, BG
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation, NUCL INST B, 147(1-4), 1999, pp. 127-131
Authors:
Demenet, JL
Tillay, V
Barbot, JF
Citation: Jl. Demenet et al., Electrical study of dislocated Si- and C-faces of n-type 6H-SiC, PHYS ST S-A, 171(1), 1999, pp. 319-324
Authors:
Schmidt, DC
Svensson, BG
Lindstrom, JL
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects, J APPL PHYS, 85(7), 1999, pp. 3556-3560
Authors:
Schmidt, DC
Svensson, BG
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses, APPL PHYS L, 75(3), 1999, pp. 364-366
Authors:
Schmidt, DC
Svensson, BG
Godey, S
Ntsoenzok, E
Barbot, JF
Blanchard, C
Citation: Dc. Schmidt et al., The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses, APPL PHYS L, 74(22), 1999, pp. 3329-3331
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