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Results: 1-16 |
Results: 16
Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE
Authors: Webb, JB Tang, H Bardwell, JA Moisa, S Peters, C MacElwee, T
Citation: Jb. Webb et al., Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE, J CRYST GR, 230(3-4), 2001, pp. 584-589
Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution
Authors: Bardwell, JA Webb, JB Tang, H Fraser, J Moisa, S
Citation: Ja. Bardwell et al., Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution, J APPL PHYS, 89(7), 2001, pp. 4142-4149
Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
Authors: Tang, H Bardwell, JA Webb, JB Moisa, S Fraser, J Rolfe, S
Citation: H. Tang et al., Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2764-2766
Properties of carbon-doped GaN
Authors: Tang, H Webb, JB Bardwell, JA Raymond, S Salzman, J Uzan-Saguy, C
Citation: H. Tang et al., Properties of carbon-doped GaN, APPL PHYS L, 78(6), 2001, pp. 757-759
Growth of high mobility GaN and AlGaN/GaN high electron mobility translator structures on 4H-SiC by ammonia molecular-beam epitaxy
Authors: Webb, JB Tang, H Bardwell, JA Coleridge, P
Citation: Jb. Webb et al., Growth of high mobility GaN and AlGaN/GaN high electron mobility translator structures on 4H-SiC by ammonia molecular-beam epitaxy, APPL PHYS L, 78(24), 2001, pp. 3845-3847
Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers
Authors: Bardwell, JA Dharma-Wardana, MWC Tang, H Webb, JB
Citation: Ja. Bardwell et al., Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers, J VAC SCI A, 18(2), 2000, pp. 643-647
Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy
Authors: Tang, H Webb, JB Bardwell, JA MacElwee, T
Citation: H. Tang et al., Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy, J VAC SCI A, 18(2), 2000, pp. 652-655
Electrical characterization of metal-oxide-semiconductor capacitors with anodic and plasma-nitrided oxides
Authors: Landsberger, LM Ghayour, R Sayedi, M Kahrizi, M Landheer, D Bardwell, JA Riopel, Y Jean, C Logiudice, V
Citation: Lm. Landsberger et al., Electrical characterization of metal-oxide-semiconductor capacitors with anodic and plasma-nitrided oxides, J VAC SCI A, 18(2), 2000, pp. 676-680
Fabrication of high performance GaN modulation doped field effect transistors
Authors: Bardwell, JA Foulds, I Lamontagne, B Tang, H Webb, JB Marshall, P Rolfe, SJ Stapledon, J MacElwee, TW
Citation: Ja. Bardwell et al., Fabrication of high performance GaN modulation doped field effect transistors, J VAC SCI A, 18(2), 2000, pp. 750-753
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
Authors: Tang, H Webb, JB Bardwell, JA Rolfe, S MacElwee, T
Citation: H. Tang et al., Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy, SOL ST ELEC, 44(12), 2000, pp. 2177-2182
High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation
Authors: Maher, H DiSanto, DW Dvorak, MW Soerensen, G Bolognesi, CR Bardwell, JA Tang, H Webb, JB
Citation: H. Maher et al., High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation, ELECTR LETT, 36(23), 2000, pp. 1969-1971
A simple wet etch for GaN
Authors: Bardwell, JA Foulds, IG Webb, JB Tang, H Fraser, J Moisa, S Rolfe, SJ
Citation: Ja. Bardwell et al., A simple wet etch for GaN, J ELEC MAT, 28(10), 1999, pp. L24-L26
Growth of high mobility AlGaN/GaN heterostructures by ammonia-molecular beam epitaxy
Authors: Webb, JB Tang, H Bardwell, JA Coleridge, P
Citation: Jb. Webb et al., Growth of high mobility AlGaN/GaN heterostructures by ammonia-molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 243-246
An infrared reflection technique for characterization of GaN epitaxial films
Authors: Bardwell, JA Dharma-wardana, MWC Leathem, B Moisa, S Webb, JB Tam, B
Citation: Ja. Bardwell et al., An infrared reflection technique for characterization of GaN epitaxial films, J ELCHEM SO, 146(8), 1999, pp. 3124-3127
Effect of photogenerated carriers on electric field-induced second harmonic generation from Si(001) in an electrochemical cell
Authors: Mitchell, SA Janz, S Bardwell, JA
Citation: Sa. Mitchell et al., Effect of photogenerated carriers on electric field-induced second harmonic generation from Si(001) in an electrochemical cell, CHEM P LETT, 310(3-4), 1999, pp. 361-366
Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
Authors: Webb, JB Tang, H Rolfe, S Bardwell, JA
Citation: Jb. Webb et al., Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy, APPL PHYS L, 75(7), 1999, pp. 953-955
Risultati: 1-16 |