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Results: 1-8 |
Results: 8
Spectromicroscopy of interfacial interactions between thin Ni films and a Au-Si surface
Authors: Gregoratti, L Barinov, A Casalis, L Kiskinova, M
Citation: L. Gregoratti et al., Spectromicroscopy of interfacial interactions between thin Ni films and a Au-Si surface, APPL SURF S, 171(3-4), 2001, pp. 265-274
Direct experimental evidence of insensitivity of local Schottky barriers to lateral chemical inhomogeneity in case studies of metal/GaN(0001) interfaces - art. no. 201312
Authors: Barinov, A Gregoratti, L Kiskinova, M
Citation: A. Barinov et al., Direct experimental evidence of insensitivity of local Schottky barriers to lateral chemical inhomogeneity in case studies of metal/GaN(0001) interfaces - art. no. 201312, PHYS REV B, 6420(20), 2001, pp. 1312
Au/GaN interface: Initial stages of formation and temperature-induced effects - art. no. 085308
Authors: Barinov, A Casalis, L Gregoratti, L Kiskinova, M
Citation: A. Barinov et al., Au/GaN interface: Initial stages of formation and temperature-induced effects - art. no. 085308, PHYS REV B, 6308(8), 2001, pp. 5308
Visible and UV pulsed laser processing of the Ti/Si(001) interface studiedby XPS microscopy with synchrotron radiation
Authors: Larciprete, R Danailov, M Barinov, A Casalis, L Gregoratti, L Goldoni, A Kiskinova, M
Citation: R. Larciprete et al., Visible and UV pulsed laser processing of the Ti/Si(001) interface studiedby XPS microscopy with synchrotron radiation, SURF SCI, 482, 2001, pp. 141-146
Stages of formation and thermal stability of a gold-n-GaN interface
Authors: Barinov, A Casalis, L Gregoratti, L Kiskinova, M
Citation: A. Barinov et al., Stages of formation and thermal stability of a gold-n-GaN interface, J PHYS D, 34(3), 2001, pp. 279-284
Thermal and pulsed laser induced surface reactions in Ti/Si(001) interfaces studied by spectromicroscopy with synchrotron radiation
Authors: Larciprete, R Danailov, M Barinov, A Gregoratti, L Kiskinova, M
Citation: R. Larciprete et al., Thermal and pulsed laser induced surface reactions in Ti/Si(001) interfaces studied by spectromicroscopy with synchrotron radiation, J APPL PHYS, 90(9), 2001, pp. 4361-4369
Lateral heterogeneity in the surface composition after laser processing ofTi/Si interface contaminated with oxygen
Authors: Larciprete, R Danailov, A Barinov, A Casalis, L Gregoratti, L Kiskinova, M
Citation: R. Larciprete et al., Lateral heterogeneity in the surface composition after laser processing ofTi/Si interface contaminated with oxygen, APPL PHYS L, 79(2), 2001, pp. 191-193
Defect-induced lateral chemical heterogeneity at Ni/GaN interfaces and itseffect on the electronic properties of the interface
Authors: Barinov, A Gregoratti, L Kaulich, B Kiskinova, M Rizzi, A
Citation: A. Barinov et al., Defect-induced lateral chemical heterogeneity at Ni/GaN interfaces and itseffect on the electronic properties of the interface, APPL PHYS L, 79(17), 2001, pp. 2752-2754
Risultati: 1-8 |