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Results:
1-12
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Results: 12
Authors:
Bayerl, MW
Brandt, MS
Graf, T
Ambacher, O
Majewski, JA
Stutzmann, M
As, DJ
Lischka, K
Citation: Mw. Bayerl et al., g values of effective mass donors in AlxGa1-xN alloys - art. no. 165204, PHYS REV B, 6316(16), 2001, pp. 5204
Authors:
Bayerl, MW
Brandt, MS
Ambacher, O
Stutzmann, M
Glaser, ER
Henry, RL
Wickenden, AE
Koleske, DD
Suski, T
Grzegory, I
Porowski, S
Citation: Mw. Bayerl et al., Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203, PHYS REV B, 6312(12), 2001, pp. 5203
Authors:
Zeisel, R
Bayerl, MW
Goennenwein, STB
Dimitrov, R
Ambacher, O
Brandt, MS
Stutzmann, M
Citation: R. Zeisel et al., DX-behavior of Si in AlN, PHYS REV B, 61(24), 2000, pp. R16283-R16286
Authors:
Goennenwein, STB
Bayerl, MW
Brandt, MS
Stutzmann, M
Citation: Stb. Goennenwein et al., Microscopic identification of the origin of generation-recombination noisein hydrogenated amorphous silicon with noise-detected magnetic resonance, PHYS REV L, 84(22), 2000, pp. 5188-5191
Authors:
Stutzmann, M
Brandt, MS
Bayerl, MW
Citation: M. Stutzmann et al., Spin-dependent processes in amorphous and microcrystalline silicon: a survey, J NON-CRYST, 266, 2000, pp. 1-22
Authors:
Goennenwein, STB
Bayerl, MW
Brandt, MS
Stutzmann, M
Citation: Stb. Goennenwein et al., Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon, J NON-CRYST, 266, 2000, pp. 237-241
Authors:
Bayerl, MW
Reinacher, NM
Angerer, H
Ambacher, O
Brandt, MS
Stutzmann, M
Citation: Mw. Bayerl et al., Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15, J APPL PHYS, 88(6), 2000, pp. 3249-3253
Authors:
Brandt, MS
Neuberger, RT
Bayerl, MW
Stutzmann, M
Citation: Ms. Brandt et al., Capacitively-detected magnetic resonance in hydrogenated amorphous siliconsolar cells, JPN J A P 2, 38(10B), 1999, pp. L1172-L1174
Authors:
Bayerl, MW
Brandt, MS
Suski, T
Grzegory, I
Porowski, S
Stutzmann, M
Citation: Mw. Bayerl et al., ODMR of bound excitons in Mg-doped GaN, PHYSICA B, 274, 1999, pp. 120-123
Authors:
Glaser, ER
Kennedy, TA
Bennett, BR
Shanabrook, BV
Hemstreet, LA
Bayerl, MW
Brandt, MS
Citation: Er. Glaser et al., Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes, PHYSICA B, 274, 1999, pp. 811-814
Authors:
Bayerl, MW
Brandt, MS
Glaser, ER
Wickenden, AE
Koleske, DD
Henry, RL
Stutzmann, M
Citation: Mw. Bayerl et al., The origin of red luminescence from Mg-doped GaN, PHYS ST S-B, 216(1), 1999, pp. 547-550
Authors:
Bayerl, MW
Brandt, MS
Angerer, H
Ambacher, O
Stutzmann, M
Citation: Mw. Bayerl et al., Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films, PHYS ST S-B, 210(2), 1998, pp. 389-393
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