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Results: 1-17 |
Results: 17
Characterization and modeling of knots in black spruce (Picea mariana) logs
Authors: Lemieux, H Beaudoin, M Zhang, SY
Citation: H. Lemieux et al., Characterization and modeling of knots in black spruce (Picea mariana) logs, WOOD FIB SC, 33(3), 2001, pp. 465-475
Spontaneous evolution of silica-supported Ti amide fragments to imine and imido complexes
Authors: Beaudoin, M Scott, SL
Citation: M. Beaudoin et Sl. Scott, Spontaneous evolution of silica-supported Ti amide fragments to imine and imido complexes, ORGANOMETAL, 20(2), 2001, pp. 237-239
Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry
Authors: Beaudoin, M Grassi, E Johnson, SR Ramaswamy, K Tsakalis, K Alford, TL Zhang, YH
Citation: M. Beaudoin et al., Real-time composition control of InAlAs grown on InP using spectroscopic ellipsometry, J VAC SCI B, 18(3), 2000, pp. 1435-1438
Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs
Authors: Johnson, SR Dowd, P Braun, W Koelle, U Ryu, CM Beaudoin, M Guo, CZ Zhang, YH
Citation: Sr. Johnson et al., Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs, J VAC SCI B, 18(3), 2000, pp. 1545-1548
A model for the sawing and grading of lumber according to knots
Authors: Lemieux, H Beaudoin, M Grondin, F
Citation: H. Lemieux et al., A model for the sawing and grading of lumber according to knots, WOOD FIB SC, 32(2), 2000, pp. 179-188
Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001)
Authors: Beaudoin, M Desjardins, P Ait-Ouali, A Brebner, JL Yip, RYF Marchand, H Isnard, L Masut, RA
Citation: M. Beaudoin et al., Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001), J APPL PHYS, 87(5), 2000, pp. 2320-2326
Multilevel infrared coupling of excitons in quantum-well semiconductors
Authors: Sadeghi, SM Meyer, J Tiedje, T Beaudoin, M
Citation: Sm. Sadeghi et al., Multilevel infrared coupling of excitons in quantum-well semiconductors, IEEE J Q EL, 36(11), 2000, pp. 1267-1271
High-performance 1,6 mu m single-epitaxy top-emitting VCSEL
Authors: Yuen, W Li, GS Nabiev, RF Boucart, J Kner, P Stone, RJ Zhang, D Beaudoin, M Zheng, T He, C Yu, K Jansen, M Worland, DP Chang-Hasnain, CJ
Citation: W. Yuen et al., High-performance 1,6 mu m single-epitaxy top-emitting VCSEL, ELECTR LETT, 36(13), 2000, pp. 1121-1123
Optical and structural properties of InAsP/(Ga)InP multilayers on InP(001): Strained-layer multiple quantum well structures and devices
Authors: Beaudoin, M Desjardins, P Yip, RYF Masut, RA
Citation: M. Beaudoin et al., Optical and structural properties of InAsP/(Ga)InP multilayers on InP(001): Strained-layer multiple quantum well structures and devices, OPTOEL PROP, 9, 2000, pp. 381-458
Growth of InP islands on LaF3/InP(111)B heterostructures by molecular beamepitaxy
Authors: Ritchie, S Beaudoin, M Tiedje, T Pinnington, T
Citation: S. Ritchie et al., Growth of InP islands on LaF3/InP(111)B heterostructures by molecular beamepitaxy, JPN J A P 2, 38(2B), 1999, pp. L192-L194
Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometry
Authors: Grassi, E Johnson, SR Beaudoin, M Tsakalis, KS
Citation: E. Grassi et al., Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometry, J VAC SCI B, 17(3), 1999, pp. 1223-1226
Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers
Authors: Beaudoin, M Johnson, SR Boonzaayer, MD Zhang, YH Johs, B
Citation: M. Beaudoin et al., Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers, J VAC SCI B, 17(3), 1999, pp. 1233-1236
Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InP
Authors: Johnson, SR Grassi, E Beaudoin, M Boonzaayer, MD Tsakalis, KS Zhang, YH
Citation: Sr. Johnson et al., Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InP, J VAC SCI B, 17(3), 1999, pp. 1237-1240
In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss
Authors: Beaudoin, M Adamcyk, M Levy, Y MacKenzie, JA Ritchie, S Tiedje, T Gelbart, Z Giesen, U Kelson, I
Citation: M. Beaudoin et al., In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss, J CRYST GR, 202, 1999, pp. 26-30
Feedback control of substrate temperature during the growth of near-lattice-matched InGaAs on InP using diffuse reflection spectroscopy
Authors: Johnson, SR Grassi, E Beaudoin, M Boonzaayer, MD Tsakalis, KS Zhang, YH
Citation: Sr. Johnson et al., Feedback control of substrate temperature during the growth of near-lattice-matched InGaAs on InP using diffuse reflection spectroscopy, J CRYST GR, 202, 1999, pp. 40-44
Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry
Authors: Beaudoin, M Kelkar, P Boonzaayer, MD Braun, W Dowd, P Johnson, SR Koelle, U Ryu, CM Zhang, YH
Citation: M. Beaudoin et al., Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry, J CRYST GR, 202, 1999, pp. 990-993
Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometry
Authors: Grassi, E Johnson, SR Beaudoin, M Tsakalis, KS
Citation: E. Grassi et al., Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometry, J CRYST GR, 202, 1999, pp. 1081-1084
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