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Results:
1-7
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Results: 7
Authors:
Herden, M
Bauer, AJ
Beichele, M
Ryssel, H
Citation: M. Herden et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode, SOL ST ELEC, 45(8), 2001, pp. 1251-1256
Authors:
Beichele, M
Bauer, AJ
Herden, M
Ryssel, H
Citation: M. Beichele et al., Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres, SOL ST ELEC, 45(8), 2001, pp. 1383-1389
Authors:
Strobel, S
Bauer, AJ
Beichele, M
Ryssel, H
Citation: S. Strobel et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices, MICROEL REL, 41(7), 2001, pp. 1085-1088
Authors:
Beichele, M
Bauer, AJ
Ryssel, H
Citation: M. Beichele et al., Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient, MICROEL REL, 41(7), 2001, pp. 1089-1092
Authors:
Beichele, M
Bauer, AJ
Ryssel, H
Citation: M. Beichele et al., Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres, MICROEL REL, 40(4-5), 2000, pp. 723-726
Authors:
Bauer, AJ
Beichele, M
Herden, M
Ryssel, H
Citation: Aj. Bauer et al., Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient oron nitrogen-implanted silicon, MICROEL ENG, 48(1-4), 1999, pp. 59-62
Authors:
Bauer, AJ
Froeschle, B
Beichele, M
Ryssel, H
Citation: Aj. Bauer et al., Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone, MICROEL REL, 39(2), 1999, pp. 311-316
Risultati:
1-7
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