Authors: Leray, JL Paillet, P Ferlet-Cavrois, V Tavernier, C Belhaddad, K Penzin, O

Citation: Jl. Leray et al., Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code, IEEE NUCL S, 47(3), 2000, pp. 620-626

Authors: Roche, P Palau, JM Belhaddad, K Bruguier, G Ecoffet, R Gasiot, J

Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543