Authors:
Leray, JL
Paillet, P
Ferlet-Cavrois, V
Tavernier, C
Belhaddad, K
Penzin, O
Citation: Jl. Leray et al., Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code, IEEE NUCL S, 47(3), 2000, pp. 620-626
Authors:
Roche, P
Palau, JM
Belhaddad, K
Bruguier, G
Ecoffet, R
Gasiot, J
Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543