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Results: 1-7 |
Results: 7
Front-end, single-wafer diffusion processing for advanced 300-mm fabrication lines
Authors: Bensahel, D Vandelle, B Morin, C Martins, J Galvier, J Vialletelle, P Henry, M
Citation: D. Bensahel et al., Front-end, single-wafer diffusion processing for advanced 300-mm fabrication lines, MICROEL ENG, 56(1-2), 2001, pp. 49-59
Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310
Authors: Boucaud, P Sauvage, S Elkurdi, M Mercier, E Brunhes, T Le Thanh, V Bouchier, D Kermarrec, O Campidelli, Y Bensahel, D
Citation: P. Boucaud et al., Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310, PHYS REV B, 6415(15), 2001, pp. 5310
Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers
Authors: Yousif, MYA Nur, O Willander, M Patel, CJ Hernandez, C Campidelli, Y Bensahel, D Kyutt, RN
Citation: Mya. Yousif et al., Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers, SOL ST ELEC, 45(11), 2001, pp. 1869-1874
Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping
Authors: Nur, O Karlsteen, M Sodervall, U Willander, M Patel, CJ Hernandez, C Campidelli, Y Bensahel, D Kyutt, RN
Citation: O. Nur et al., Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping, SEMIC SCI T, 15(7), 2000, pp. L25-L30
Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
Authors: Patriarche, G Sagnes, I Boucaud, P Le Thanh, V Bouchier, D Hernandez, C Campidelli, Y Bensahel, D
Citation: G. Patriarche et al., Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition, APPL PHYS L, 77(3), 2000, pp. 370-372
Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition
Authors: Brunhes, T Boucaud, P Sauvage, S Aniel, F Lourtioz, JM Hernandez, C Campidelli, Y Kermarrec, O Bensahel, D Faini, G Sagnes, I
Citation: T. Brunhes et al., Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition, APPL PHYS L, 77(12), 2000, pp. 1822-1824
Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
Authors: Hernandez, C Campidelli, Y Simon, D Bensahel, D Sagnes, I Patriarche, G Boucaud, P Sauvage, S
Citation: C. Hernandez et al., Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor, J APPL PHYS, 86(2), 1999, pp. 1145-1148
Risultati: 1-7 |