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Results: 1-9 |
Results: 9
Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth
Authors: Zhang, R Bhat, I
Citation: R. Zhang et I. Bhat, Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth, J ELEC MAT, 30(11), 2001, pp. 1370-1375
In-situ monitoring of the growth of Bi2Te3 and Sb2Te3 films and Bi2Te3-Sb2Te3 superlattice using spectroscopic ellipsometry
Authors: Cui, R Bhat, I O'Quinn, B Venkatasubramanian, R
Citation: R. Cui et al., In-situ monitoring of the growth of Bi2Te3 and Sb2Te3 films and Bi2Te3-Sb2Te3 superlattice using spectroscopic ellipsometry, J ELEC MAT, 30(11), 2001, pp. 1376-1381
Preparation and characterization of single-crystal aluminum nitride substrates
Authors: Schowalter, LJ Rojo, JC Yakolev, N Shusterman, Y Dovidenko, K Wang, RJ Bhat, I Slack, GA
Citation: Lj. Schowalter et al., Preparation and characterization of single-crystal aluminum nitride substrates, MRS I J N S, 5, 2000, pp. NIL_382-NIL_387
Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy
Authors: Zhang, R Bhat, I
Citation: R. Zhang et I. Bhat, Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy, J ELEC MAT, 29(6), 2000, pp. 765-769
Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates
Authors: Schowalter, LJ Rojo, JC Slack, GA Shusterman, Y Wang, R Bhat, I Arunmozhi, G
Citation: Lj. Schowalter et al., Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates, J CRYST GR, 211(1-4), 2000, pp. 78-81
Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates
Authors: Schowalter, LJ Shusterman, Y Wang, R Bhat, I Arunmozhi, G Slack, GA
Citation: Lj. Schowalter et al., Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates, APPL PHYS L, 76(8), 2000, pp. 985-987
Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source
Authors: Dakshinamurthy, S Shetty, S Bhat, I Hitchcock, C Gutmann, R Charache, G Freeman, M
Citation: S. Dakshinamurthy et al., Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source, J ELEC MAT, 28(4), 1999, pp. 355-359
Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates
Authors: Ehsani, H Bhat, I Gutmann, RJ Charache, G Freeman, M
Citation: H. Ehsani et al., Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates, J APPL PHYS, 86(2), 1999, pp. 835-840
p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy
Authors: Ehsani, H Bhat, I Hitchcock, C Gutmann, RJ Charache, G Freeman, M
Citation: H. Ehsani et al., p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 385-390
Risultati: 1-9 |