Authors: Binari, SC Ikossi, K Roussos, JA Kruppa, W Park, D Dietrich, HB Koleske, DD Wickenden, AE Henry, RL

Citation: Sc. Binari et al., Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE DEVICE, 48(3), 2001, pp. 465-471

Authors: Klein, PB Binari, SC Ikossi-Anastasiou, K Wickenden, AE Koleske, DD Henry, RL Katzer, DS

Citation: Pb. Klein et al., Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors, ELECTR LETT, 37(10), 2001, pp. 661-662

Authors: Klein, PB Binari, SC Ikossi, K Wickenden, AE Koleske, DD Henry, RL

Citation: Pb. Klein et al., Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy, APPL PHYS L, 79(21), 2001, pp. 3527-3529

Authors: Klein, PB Binari, SC Freitas, JA Wickenden, AE

Citation: Pb. Klein et al., Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors, J APPL PHYS, 88(5), 2000, pp. 2843-2852

Authors: Albrecht, JD Ruden, PP Binari, SC Ancona, MG

Citation: Jd. Albrecht et al., AlGaN/GaN heterostructure field-effect transistor model including thermal effects, IEEE DEVICE, 47(11), 2000, pp. 2031-2036

Authors: Klein, PB Freitas, JA Binari, SC Wickenden, AE

Citation: Pb. Klein et al., Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors, APPL PHYS L, 75(25), 1999, pp. 4016-4018