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Results: 1-9 |
Results: 9
Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
Authors: Pons, M Meziere, J Dedulle, JM Kuan, SWT Blanquet, E Bernard, C Ferret, P Di Cioccio, L Billon, T Madar, R
Citation: M. Pons et al., Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition, J PHYS IV, 11(PR3), 2001, pp. 1079-1086
Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization - (invited)
Authors: Ramberg, CE Blanquet, E Pons, M Bernard, C Madar, R
Citation: Ce. Ramberg et al., Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization - (invited), MICROEL ENG, 50(1-4), 2000, pp. 357-368
Contribution to the modeling of CVD silicon carbide growth
Authors: Raffy, C Blanquet, E Pons, M Bernard, C Melius, CF Allendorf, MD
Citation: C. Raffy et al., Contribution to the modeling of CVD silicon carbide growth, J PHYS IV, 9(P8), 1999, pp. 205-212
Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape
Authors: Pisch, A Blanquet, E Pons, M Bernard, C Anikin, M Dedulle, JM Madar, R
Citation: A. Pisch et al., Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape, J PHYS IV, 9(P8), 1999, pp. 213-219
Thermodynamic modeling of the Ti-Al-N system and application to the simulation of CVD processes of the (Ti,Al)N metastable phase
Authors: Anderbouhr, S Gilles, S Blanquet, E Bernard, C Madar, R
Citation: S. Anderbouhr et al., Thermodynamic modeling of the Ti-Al-N system and application to the simulation of CVD processes of the (Ti,Al)N metastable phase, CHEM VAPOR, 5(3), 1999, pp. 109-115
State of the art in the modelling of SiC sublimation growth
Authors: Pons, M Anikin, M Chourou, K Dedulle, JM Madar, R Blanquet, E Pisch, A Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: M. Pons et al., State of the art in the modelling of SiC sublimation growth, MAT SCI E B, 61-2, 1999, pp. 18-28
Modelling of SiC sublimation growth process: analyses of macrodefects formation
Authors: Chourou, K Anikin, M Bluet, JM Dedulle, JM Madar, R Pons, M Blanquet, E Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85
Thermodynamic calculations as the basis for CVD production of silicide coatings
Authors: Bernard, C Pons, M Blanquet, E Madar, R
Citation: C. Bernard et al., Thermodynamic calculations as the basis for CVD production of silicide coatings, MRS BULL, 24(4), 1999, pp. 27-31
LPCVD and PACVD (Ti,Al)N films: morphology and mechanical properties
Authors: Anderbouhr, S Ghetta, V Blanquet, E Chabrol, C Schuster, F Bernard, C Madar, R
Citation: S. Anderbouhr et al., LPCVD and PACVD (Ti,Al)N films: morphology and mechanical properties, SURF COAT, 115(2-3), 1999, pp. 103-110
Risultati: 1-9 |