Authors: Gerstmann, U Blumenau, AT Overhof, H

Citation: U. Gerstmann et al., Transition metal defects in group-III nitrides: An ab initio calculation of hyperfine interactions and optical transitions - art. no. 075204, PHYS REV B, 6307(7), 2001, pp. 5204

Authors: Blumenau, AT Jones, R Oberg, S Briddon, PR Frauenheim, T

Citation: At. Blumenau et al., Dislocation related photoluminescence in silicon - art. no. 187404, PHYS REV L, 8718(18), 2001, pp. 7404

Authors: Elsner, J Blumenau, AT Frauenheim, T Jones, R Heggie, MI

Citation: J. Elsner et al., Structural and electronic properties of line defects in GaN, MRS I J N S, 5, 2000, pp. NIL_413-NIL_423

Authors: Blumenau, AT Jones, R Oberg, S Frauenheim, T Briddon, PR

Citation: At. Blumenau et al., Optical bands related to dislocations in Si, J PHYS-COND, 12(49), 2000, pp. 10123-10129

Authors: Blumenau, AT Elsner, J Jones, R Heggie, MI Oberg, S Frauenheim, T Briddon, PR

Citation: At. Blumenau et al., Dislocations in hexagonal and cubic GaN, J PHYS-COND, 12(49), 2000, pp. 10223-10233