Citation: Gc. Chen et al., Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structure, J PHYS IV, 11(PR3), 2001, pp. 763-770
Authors:
Boo, JH
Lee, SB
Lee, KW
Yu, KS
Kim, Y
Yeon, SH
Jung, IN
Citation: Jh. Boo et al., Epitaxial growth of cubic SiC thin films on silicon using single molecularprecursors by metalorganic chemical vapor deposition, J VAC SCI A, 19(4), 2001, pp. 1887-1893
Authors:
Mook-Jung, I
Hong, HS
Boo, JH
Lee, KH
Yun, SH
Cheong, MY
Joo, I
Huh, K
Jung, MW
Citation: I. Mook-jung et al., Ginsenoside Rb1 and Rg1 improve spatial learning and increase hippocampal synaptophysin level in mice, J NEUROSC R, 63(6), 2001, pp. 509-515
Authors:
Boo, JH
Lee, SB
Ku, SJ
Koh, W
Kim, C
Yu, KS
Kim, Y
Citation: Jh. Boo et al., MOCVD of MgAl2O4 thin films using new single molecular precursors: application of beta-hydrogen elimination to the growth of heterometallic oxide films, APPL SURF S, 169, 2001, pp. 581-586
Citation: Jh. Boo, Effects of mesh size in a flat evaporator and condenser cooling capacity on the thermal performance of a capillary pumped loop, KSME INT J, 14(1), 2000, pp. 121-129
Citation: Jh. Boo et al., Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition, J VAC SCI A, 18(4), 2000, pp. 1590-1594
Authors:
Yoon, HG
Boo, JH
Liu, WL
Lee, SB
Park, SC
Kang, H
Kim, Y
Citation: Hg. Yoon et al., In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics, J VAC SCI A, 18(4), 2000, pp. 1464-1468
Citation: Jg. Han et al., Growth of Hf(C,N) thin films on Si(100) and D2 steel substrates by plasma assisted MOCVD, SURF COAT, 131(1-3), 2000, pp. 73-78
Citation: Bc. Kang et al., Growth of TiO2 thin films on Si(100) substrates using single molecular precursors by metal organic chemical vapor deposition, SURF COAT, 131(1-3), 2000, pp. 88-92
Citation: Jh. Boo et al., High vacuum chemical vapor deposition of cubic SiC thin films on Si(001) substrates using single source precursor, SURF COAT, 131(1-3), 2000, pp. 147-152
Citation: Jh. Boo et al., High rate deposition of poly-Si thin films at low temperature using a new designed magnetron sputtering source, SURF COAT, 131(1-3), 2000, pp. 211-215
Authors:
Boo, JH
Lee, SY
Lee, SB
Kwak, HT
Schroder, U
Linke, R
Wandelt, K
Citation: Jh. Boo et al., Growth of Pt thin films on Cu(111) and formation of Pt/Cu surface alloys: Growth mechanism and diffusion barrier, J KOR PHYS, 35, 1999, pp. S554-S559
Authors:
Boo, JH
Lee, SB
Yu, KS
Kim, Y
Kim, YS
Park, JT
Citation: Jh. Boo et al., MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors, J KOR PHYS, 34, 1999, pp. S532-S537
Citation: Jh. Boo et al., Low-temperature epitaxial growth of cubic SiC thin films on Si(111) using supersonic molecular jet of single source precursors, THIN SOL FI, 344, 1999, pp. 650-655
Citation: Jh. Boo et al., Growth of magnesium oxide thin films using single molecular precursors by metal-organic chemical vapor deposition, THIN SOL FI, 341(1-2), 1999, pp. 63-67
Citation: Jh. Boo et al., Growth of boron nitride thin films on silicon substrates using new organoboron precursors, PHYS ST S-A, 176(1), 1999, pp. 705-710
Authors:
Boo, JH
Lee, SB
Kim, YS
Park, JT
Yu, KS
Kim, Y
Citation: Jh. Boo et al., Growth of AlN and GaN thin films on Si(100) using new single molecular precursors by MOCVD method, PHYS ST S-A, 176(1), 1999, pp. 711-717