AAAAAA

   
Results: 1-11 |
Results: 11
Tungsten disulphide sheathed carbon nanotubes
Authors: Whitby, RLD Hsu, WK Boothroyd, CB Fearon, PK Kroto, HW Walton, DRM
Citation: Rld. Whitby et al., Tungsten disulphide sheathed carbon nanotubes, CHEMPHYSCHE, 2(10), 2001, pp. 620-623
Morphology, structure and growth of WS2 nanotubes
Authors: Zhu, YQ Hsu, WK Terrones, H Grobert, N Chang, BH Terrones, M Wei, BQ Kroto, HW Walton, DRM Boothroyd, CB Kinloch, I Chen, GZ Windle, AH Fray, DJ
Citation: Yq. Zhu et al., Morphology, structure and growth of WS2 nanotubes, J MAT CHEM, 10(11), 2000, pp. 2570-2577
Mixed-phase WxMoyCzS2 nanotubes
Authors: Hsu, WK Zhu, YQ Boothroyd, CB Kinloch, I Trasobares, S Terrones, H Grobert, N Terrones, M Escudero, R Chen, GZ Colliex, C Windle, AH Fray, DJ Kroto, HW Walton, DRM
Citation: Wk. Hsu et al., Mixed-phase WxMoyCzS2 nanotubes, CHEM MATER, 12(12), 2000, pp. 3541
Quantification of high-resolution electron microscope images of amorphous carbon
Authors: Boothroyd, CB
Citation: Cb. Boothroyd, Quantification of high-resolution electron microscope images of amorphous carbon, ULTRAMICROS, 83(3-4), 2000, pp. 159-168
A critical condition in Fresnel diffraction used for ultra-high resolutionlithographic printing
Authors: Bourdillon, AJ Boothroyd, CB Kong, JR Vladimirsky, Y
Citation: Aj. Bourdillon et al., A critical condition in Fresnel diffraction used for ultra-high resolutionlithographic printing, J PHYS D, 33(17), 2000, pp. 2133-2141
Grain refinement by Al-Ti-B alloys in aluminium melts: a study of the mechanisms of poisoning by zirconium
Authors: Bunn, AM Schumacher, P Kearns, MA Boothroyd, CB Greer, AL
Citation: Am. Bunn et al., Grain refinement by Al-Ti-B alloys in aluminium melts: a study of the mechanisms of poisoning by zirconium, MATER SCI T, 15(10), 1999, pp. 1115-1123
Evaluation of silicon nitride and silicon carbide as efficient polysilicongrain-growth inhibitors
Authors: Cha, CL Chor, EF Jia, YM Bourdillon, AJ Gong, H Pan, JS Zhang, AQ Tang, SK Boothroyd, CB
Citation: Cl. Cha et al., Evaluation of silicon nitride and silicon carbide as efficient polysilicongrain-growth inhibitors, J MAT SCI L, 18(17), 1999, pp. 1427-1431
Energy-filtered transmission electron microscopy of multilayers in semiconductors
Authors: Liu, CP Boothroyd, CB Humphreys, CJ
Citation: Cp. Liu et al., Energy-filtered transmission electron microscopy of multilayers in semiconductors, J MICROSC O, 194, 1999, pp. 58-70
Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images
Authors: Liu, CP Preston, AR Boothroyd, CB Humphreys, CJ
Citation: Cp. Liu et al., Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images, J MICROSC O, 194, 1999, pp. 171-182
Morphological and structural characteristics of homoepitaxial GaN grown bymetalorganic chemical vapour deposition (MOCVD)
Authors: Weyher, JL Brown, PD Zauner, ARA Muller, S Boothroyd, CB Foord, DT Hageman, PR Humphreys, CJ Larsen, PK Grzegory, I Porowski, S
Citation: Jl. Weyher et al., Morphological and structural characteristics of homoepitaxial GaN grown bymetalorganic chemical vapour deposition (MOCVD), J CRYST GR, 204(4), 1999, pp. 419-428
Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3
Authors: Saifullah, MSM Botton, GA Boothroyd, CB Humphreys, CJ
Citation: Msm. Saifullah et al., Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3, J APPL PHYS, 86(5), 1999, pp. 2499-2504
Risultati: 1-11 |