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Results:
1-15
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Results: 15
Authors:
Regis, M
Borgarino, M
Bary, L
Llopis, O
Graffeuil, J
Escotte, L
Koenig, U
Plana, R
Citation: M. Regis et al., Noise behavior in SiGe devices, SOL ST ELEC, 45(11), 2001, pp. 1891-1897
Authors:
Niu, GF
Juraver, JB
Borgarino, M
Jin, ZR
Cressler, JD
Plana, R
Llopis, O
Mathew, S
Zhang, SM
Clark, S
Joseph, AJ
Citation: Gf. Niu et al., Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGeHBTs, SOL ST ELEC, 45(1), 2001, pp. 107-112
Authors:
Borgarino, M
Sozzi, G
Mazzanti, A
Verzellesi, G
Citation: M. Borgarino et al., Gate-lag effects in AlGaAs/GaAs power HFET's, MICROEL REL, 41(9-10), 2001, pp. 1585-1589
Authors:
Borgarino, M
Menozzi, R
Dieci, D
Cattani, L
Fantini, F
Citation: M. Borgarino et al., Reliability physics of compound semiconductor transistors for microwave applications, MICROEL REL, 41(1), 2001, pp. 21-30
Authors:
Bary, L
Borgarino, M
Plana, R
Parra, T
Kovacic, SJ
Lafontaine, H
Graffeuil, J
Citation: L. Bary et al., Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs, IEEE DEVICE, 48(4), 2001, pp. 767-773
Authors:
Tediosi, E
Borgarino, M
Verzellesi, G
Sozzi, G
Menozzi, R
Citation: E. Tediosi et al., Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs, ELECTR LETT, 37(11), 2001, pp. 719-720
Authors:
Busani, M
Menozzi, R
Borgarino, M
Fantini, F
Citation: M. Busani et al., Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's, IEEE T COMP, 23(2), 2000, pp. 352-359
Authors:
Borgarino, M
Tartarin, JG
Kuchenbecker, J
Parra, T
Lafontaine, H
Kovacic, T
Plana, R
Graffeuil, J
Citation: M. Borgarino et al., On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors, IEEE MICR G, 10(11), 2000, pp. 466-468
Authors:
Fregonara, CZ
Salviati, G
Borgarino, M
Lazzarini, L
Fantini, F
Citation: Cz. Fregonara et al., Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices, MICRON, 31(3), 2000, pp. 269-275
Authors:
Borgarino, M
Plana, R
Fendler, M
Vilcot, JP
Mollot, F
Barette, J
Decoster, D
Graffeuil, J
Citation: M. Borgarino et al., Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors, SOL ST ELEC, 44(1), 2000, pp. 59-62
Authors:
Kuchenbecker, J
Borgarino, M
Coustou, A
Plana, R
Graffeuil, J
Fantini, F
Citation: J. Kuchenbecker et al., Evaluation of the hot carrier/ionizing radiation induced effects on the RFcharacteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation, MICROEL REL, 40(8-10), 2000, pp. 1579-1584
Authors:
Menozzi, R
Borgarino, M
van der Zanden, K
Schreurs, D
Citation: R. Menozzi et al., On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's, IEEE ELEC D, 20(4), 1999, pp. 152-154
Authors:
Borgarino, M
Plana, R
Delage, S
Fantini, F
Graffeuil, J
Citation: M. Borgarino et al., On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors, MICROEL REL, 39(12), 1999, pp. 1823-1832
Authors:
van der Zanden, K
Schreurs, DMMP
Menozzi, R
Borgarino, M
Citation: K. Van Der Zanden et al., Reliability testing of InPHEMT's using electrical stress methods, IEEE DEVICE, 46(8), 1999, pp. 1570-1576
Authors:
Borgarino, M
Plana, R
Delage, SL
Fantini, F
Graffeuil, J
Citation: M. Borgarino et al., Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's, IEEE DEVICE, 46(1), 1999, pp. 10-16
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