Authors: Yao, T Bouchakour, R Billiot, G

Citation: T. Yao et al., Analytical model of Fowler-Nordheim tunnel injection for design and simulation of complex memories circuits, J NON-CRYST, 280(1-3), 2001, pp. 92-95

Authors: Sorbier, JP Plossu, C Croci, S Boivin, P Renard, S Harrabech, N Bouchakour, R

Citation: Jp. Sorbier et al., Extraction of band diagram parameters from Fowler-Nordheim model in silicon dioxide, J NON-CRYST, 280(1-3), 2001, pp. 96-102

Authors: Plossu, C Croci, S Monti, N Bouchakour, R Laffont, R Boivin, P Mirabel, JM

Citation: C. Plossu et al., Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress, J NON-CRYST, 280(1-3), 2001, pp. 103-109

Authors: Canet, P Bouchakour, R Harabech, N Boivin, P Mirabel, JM Plossu, C

Citation: P. Canet et al., Improvement of EEPROM cell reliability by optimization of signal programming, J NON-CRYST, 280(1-3), 2001, pp. 116-121

Authors: Bouchakour, R Harabech, N Canet, P Mirabel, JM Boivin, P Pizzuto, O

Citation: R. Bouchakour et al., A new physical-based compact model of floating-gate EEPROM cells, J NON-CRYST, 280(1-3), 2001, pp. 122-126

Authors: Plossu, C Voisin, JM Bos, B Raynaud, C Bouchakour, R Boivin, P Balland, B

Citation: C. Plossu et al., Dynamic stressing of thin tunnel oxides: a way to emulate a single EEPROM cell programming function, J NON-CRYST, 245, 1999, pp. 85-91