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Results:
1-12
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Results: 12
Authors:
Boudinov, H
de Souza, JP
Jagadish, C
Citation: H. Boudinov et al., Electrical isolation of n-type InP by ion bombardment: Dose dependence andthermal stability, NUCL INST B, 175, 2001, pp. 235-240
Authors:
Boudinov, H
Tan, HH
Jagadish, C
Citation: H. Boudinov et al., Electrical isolation of n-type and p-type InP layers by proton bombardment, J APPL PHYS, 89(10), 2001, pp. 5343-5347
Authors:
de Souza, JP
Suprun-Belevich, Y
Boudinov, H
Cima, CA
Citation: Jp. De Souza et al., Mechanical strain and damage in Si implanted with O and N ions at elevatedtemperatures: Evidence of ion beam induced annealing, J APPL PHYS, 89(1), 2001, pp. 42-46
Authors:
Boudinov, H
Kucheyev, SO
Williams, JS
Jagadish, C
Li, G
Citation: H. Boudinov et al., Electrical isolation of GaN by MeV ion irradiation, APPL PHYS L, 78(7), 2001, pp. 943-945
Authors:
Araujo, CM
de Almeida, JS
Pepe, I
da Silva, AF
Sernelius, BE
de Souza, JP
Boudinov, H
Citation: Cm. Araujo et al., Band-gap shift of the heavily doped single- and double-donor systems Si : Bi and Si : P,Bi, PHYS REV B, 62(19), 2000, pp. 12882-12887
Authors:
Cima, CA
Boudinov, H
de Souza, JP
Suprun-Belevich, Y
Fichtner, PFP
Citation: Ca. Cima et al., Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures, J APPL PHYS, 88(4), 2000, pp. 1771-1775
Authors:
de Souza, JP
Suprun-Belevich, Y
Boudinov, H
Cima, CA
Citation: Jp. De Souza et al., Damage accumulation in Si crystal during ion implantation at elevated temperatures: Evidence of chemical effects, J APPL PHYS, 87(12), 2000, pp. 8385-8388
Authors:
da Silva, AF
Sernelius, BE
de Souza, JP
Boudinov, H
Zheng, HR
Sarachik, MP
Citation: Af. Da Silva et al., Impurity resistivity of the double-donor system Si : P,Bi, PHYS REV B, 60(23), 1999, pp. 15824-15828
Authors:
Boudinov, H
de Souza, JP
Saul, CK
Citation: H. Boudinov et al., Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate, J APPL PHYS, 86(10), 1999, pp. 5909-5911
Authors:
Danilov, I
de Souza, JP
Boudinov, H
Murel, AV
Daniltsev, VM
Shashkin, VI
Citation: I. Danilov et al., Electrical isolation of a silicon delta-doped layer in GaAs by ion irradiation, APPL PHYS L, 75(13), 1999, pp. 1917-1919
Authors:
de Souza, JP
Danilov, I
Boudinov, H
Citation: Jp. De Souza et al., Electrical isolation of GaAs by light ion irradiation damage, RADIAT EFF, 147(1-2), 1998, pp. 109-120
Authors:
de Souza, JP
Danilov, I
Boudinov, H
Citation: Jp. De Souza et al., Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature, J APPL PHYS, 84(9), 1998, pp. 4757-4760
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