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Results: 1-15 |
Results: 15
Radiation-induced defects in solar cell materials
Authors: Bourgoin, JC de Angelis, N
Citation: Jc. Bourgoin et N. De Angelis, Radiation-induced defects in solar cell materials, SOL EN MAT, 66(1-4), 2001, pp. 467-477
Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells
Authors: de Angelis, N Bourgoin, JC Takamoto, T Khan, A Yamaguchi, M
Citation: N. De Angelis et al., Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells, SOL EN MAT, 66(1-4), 2001, pp. 495-500
Defects and defect behaviour in GaAs grown at low temperature
Authors: Stellmacher, M Bisaro, R Galtier, P Nagle, J Khirouni, K Bourgoin, JC
Citation: M. Stellmacher et al., Defects and defect behaviour in GaAs grown at low temperature, SEMIC SCI T, 16(6), 2001, pp. 440-446
The defect responsible for non-radiative recombination in GaAs materials
Authors: Bourgoin, JC De Angelis, N
Citation: Jc. Bourgoin et N. De Angelis, The defect responsible for non-radiative recombination in GaAs materials, SEMIC SCI T, 16(6), 2001, pp. 497-501
Polycrystalline GaAs for large area imaging detectors
Authors: Bourgoin, JC
Citation: Jc. Bourgoin, Polycrystalline GaAs for large area imaging detectors, NUCL INST A, 466(1), 2001, pp. 9-13
A new GaAs material for X-ray imaging
Authors: Bourgoin, JC
Citation: Jc. Bourgoin, A new GaAs material for X-ray imaging, NUCL INST A, 460(1), 2001, pp. 159-164
Potential of thick GaAs epitaxial layers for pixel detectors
Authors: Bourgoin, JC de Angelis, N Smith, K Bates, R Whitehill, C Meikle, A
Citation: Jc. Bourgoin et al., Potential of thick GaAs epitaxial layers for pixel detectors, NUCL INST A, 458(1-2), 2001, pp. 344-347
Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP
Authors: Khan, A Yamaguchi, M Bourgoin, JC Ando, K Takamoto, T
Citation: A. Khan et al., Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP, J APPL PHYS, 89(8), 2001, pp. 4263-4268
Impurity incorporation during epitaxial growth of GaAs by chemical reaction
Authors: Gandouzi, M Bourgoin, JC Mimila-Arroyo, J Grattepain, C Grattepain, C
Citation: M. Gandouzi et al., Impurity incorporation during epitaxial growth of GaAs by chemical reaction, J CRYST GR, 218(2-4), 2000, pp. 167-172
Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells
Authors: Khan, A Yamaguchi, M Takamoto, T de Angelis, N Bourgoin, JC
Citation: A. Khan et al., Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells, J CRYST GR, 210(1-3), 2000, pp. 264-267
Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
Authors: Khan, A Yamaguchi, M Bourgoin, JC de Angelis, N Takamoto, T
Citation: A. Khan et al., Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells, APPL PHYS L, 76(18), 2000, pp. 2559-2561
Mechanism of GaAs transport by water reaction application to the growth ofthick epitaxial layers
Authors: Hammadi, M Bourgoin, JC Samic, H
Citation: M. Hammadi et al., Mechanism of GaAs transport by water reaction application to the growth ofthick epitaxial layers, J MAT S-M E, 10(5-6), 1999, pp. 399-402
As antisite incorporation in epitaxial growth of GaAs
Authors: Bourgoin, JC Hammadi, H Stellmacher, M Nagle, J Grandidier, B Stievenard, D Nys, JP Delerue, C Lannoo, M
Citation: Jc. Bourgoin et al., As antisite incorporation in epitaxial growth of GaAs, PHYSICA B, 274, 1999, pp. 725-728
Electron conduction in low temperature grown GaAs
Authors: Khirouni, K Stellmacher, M Nagle, J Bourgoin, JC
Citation: K. Khirouni et al., Electron conduction in low temperature grown GaAs, SOL ST ELEC, 43(3), 1999, pp. 589-597
The energy level of the EL2 defect in GaAs
Authors: Bourgoin, JC Neffati, T
Citation: Jc. Bourgoin et T. Neffati, The energy level of the EL2 defect in GaAs, SOL ST ELEC, 43(1), 1999, pp. 153-158
Risultati: 1-15 |