AAAAAA

   
Results: 1-9 |
Results: 9
Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy
Authors: Smith, KV Yu, ET Redwing, JM Boutros, KS
Citation: Kv. Smith et al., Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy, J ELEC MAT, 29(3), 2000, pp. 274-280
Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
Authors: Hashizume, T Alekseev, E Pavlidis, D Boutros, KS Redwing, J
Citation: T. Hashizume et al., Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition, J APPL PHYS, 88(4), 2000, pp. 1983-1986
Crystallographic wet chemical etching of p-type GaN
Authors: Stocker, DA Goepfert, ID Schubert, EF Boutros, KS Redwing, JM
Citation: Da. Stocker et al., Crystallographic wet chemical etching of p-type GaN, J ELCHEM SO, 147(2), 2000, pp. 763-764
An Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistorwith F-max of 107 GHz
Authors: Li, R Cai, SJ Wong, L Chen, Y Wang, KL Smith, RP Martin, SC Boutros, KS Redwing, JM
Citation: R. Li et al., An Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistorwith F-max of 107 GHz, IEEE ELEC D, 20(7), 1999, pp. 323-325
Effect of illumination on the electrical characteristics of AlGaN/GaN FETs
Authors: Dietrich, R Vescan, A Wieszt, A Leier, H Boutros, KS Redwing, JM Kornitzer, K Freitag, R Ebner, T Thonke, K
Citation: R. Dietrich et al., Effect of illumination on the electrical characteristics of AlGaN/GaN FETs, PHYS ST S-A, 176(1), 1999, pp. 209-212
Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET
Authors: Dang, XZ Welty, RJ Qiao, D Asbeck, PM Lau, SS Yu, ET Boutros, KS Redwing, JM
Citation: Xz. Dang et al., Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET, ELECTR LETT, 35(7), 1999, pp. 602-603
Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures
Authors: Smith, KV Yu, ET Redwing, JM Boutros, KS
Citation: Kv. Smith et al., Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures, APPL PHYS L, 75(15), 1999, pp. 2250-2252
Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor
Authors: Dang, XZ Asbeck, PM Yu, ET Sullivan, GJ Chen, MY McDermott, BT Boutros, KS Redwing, JM
Citation: Xz. Dang et al., Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor, APPL PHYS L, 74(25), 1999, pp. 3890-3892
Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
Authors: Yu, LS Xing, QJ Qiao, D Lau, SS Boutros, KS Redwing, JM
Citation: Ls. Yu et al., Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure, APPL PHYS L, 73(26), 1998, pp. 3917-3919
Risultati: 1-9 |