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Results: 26-35/35
Authors:
Thamm, A
Brandt, O
Takemura, Y
Trampert, A
Ploog, KH
Citation: A. Thamm et al., Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001), APPL PHYS L, 75(7), 1999, pp. 944-946
Authors:
Brandt, O
Muralidharan, R
Waltereit, P
Thamm, A
Trampert, A
von Kiedrowski, H
Ploog, KH
Citation: O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021
Authors:
Waltereit, P
Brandt, O
Ploog, KH
Citation: P. Waltereit et al., Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on gamma-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy, APPL PHYS L, 75(14), 1999, pp. 2029-2031
Authors:
Waltereit, P
Brandt, O
Trampert, A
Ramsteiner, M
Reiche, M
Qi, M
Ploog, KH
Citation: P. Waltereit et al., Influence of AlN nucleation layers on growth mode and strain relief of GaNgrown on 6H-SiC(0001), APPL PHYS L, 74(24), 1999, pp. 3660-3662
Authors:
Fricke, J
Yang, B
Brandt, O
Ploog, K
Citation: J. Fricke et al., Patterning of cubic and hexagonal GaN by Cl-2/N-2-based reactive ion etching, APPL PHYS L, 74(23), 1999, pp. 3471-3473
Authors:
Brandt, O
Ringling, J
Ploog, KH
Wunsche, HJ
Henneberger, F
Citation: O. Brandt et al., Temperature dependence of the radiative lifetime in GaN, PHYS REV B, 58(24), 1998, pp. R15977-R15980
Authors:
Brandt, O
Yang, B
Wunsche, HJ
Jahn, U
Ringling, J
Paris, G
Grahn, HT
Ploog, KH
Citation: O. Brandt et al., Impact of exciton diffusion on the optical properties of thin GaN layers, PHYS REV B, 58(20), 1998, pp. R13407-R13410
Authors:
Trampert, A
Brandt, O
Ploog, KH
Citation: A. Trampert et al., Crystal structure of group III nitrides, SEM SEMIMET, 50, 1998, pp. 167-192
Authors:
Mullhauser, JR
Brandt, O
Trampert, A
Jenichen, B
Ploog, KH
Citation: Jr. Mullhauser et al., Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(9), 1998, pp. 1230-1232
Authors:
Yang, B
Trampert, A
Jenichen, B
Brandt, O
Ploog, KH
Citation: B. Yang et al., Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(26), 1998, pp. 3869-3871