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Results: 1-16 |
Results: 16
Ab initio study of the oxygen vacancy in SrTiO3
Authors: Astala, R Bristowe, PD
Citation: R. Astala et Pd. Bristowe, Ab initio study of the oxygen vacancy in SrTiO3, MODEL SIM M, 9(5), 2001, pp. 415-422
The electrical activity of GaN doped with transition metal impurities
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, The electrical activity of GaN doped with transition metal impurities, MODEL SIM M, 9(4), 2001, pp. 249-258
Electronic properties of a grain boundary in Sb-doped ZnO
Authors: Carlsson, JM Hellsing, B Domingos, HS Bristowe, PD
Citation: Jm. Carlsson et al., Electronic properties of a grain boundary in Sb-doped ZnO, J PHYS-COND, 13(44), 2001, pp. 9937-9943
Computational study of the effect of Al and In on the formation energies and acceptor levels of Mg and C dopants in GaN
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, Computational study of the effect of Al and In on the formation energies and acceptor levels of Mg and C dopants in GaN, J PHYS-COND, 13(40), 2001, pp. 8875-8880
Electronic structure of twist grain-boundaries in ZnO and the effect of Sbdoping
Authors: Domingos, HS Bristowe, PD
Citation: Hs. Domingos et Pd. Bristowe, Electronic structure of twist grain-boundaries in ZnO and the effect of Sbdoping, COMP MAT SC, 22(1-2), 2001, pp. 38-43
Formation energies of metal impurities in GaN
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, Formation energies of metal impurities in GaN, COMP MAT SC, 22(1-2), 2001, pp. 73-77
Ab initio and classical simulations of defects in SrTiO3
Authors: Astala, R Bristowe, PD
Citation: R. Astala et Pd. Bristowe, Ab initio and classical simulations of defects in SrTiO3, COMP MAT SC, 22(1-2), 2001, pp. 81-86
Ab initio study of the effect of doping on stacking faults in GaN
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, Ab initio study of the effect of doping on stacking faults in GaN, J CRYST GR, 230(3-4), 2001, pp. 432-437
Theoretical investigations of interfaces in electroceramic materials
Authors: Bristowe, PD Domingos, HS
Citation: Pd. Bristowe et Hs. Domingos, Theoretical investigations of interfaces in electroceramic materials, ADV ENG MAT, 2(8), 2000, pp. 497-502
Simulations of defect-interface interactions in GaN
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, Simulations of defect-interface interactions in GaN, MRS I J N S, 5, 2000, pp. NIL_246-NIL_251
Stacking fault energies in Si doped GaN: A first principles study
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, Stacking fault energies in Si doped GaN: A first principles study, APPL PHYS L, 77(4), 2000, pp. 534-536
Computer modelling of slip in TiC
Authors: Harris, RM Bristowe, PD
Citation: Rm. Harris et Pd. Bristowe, Computer modelling of slip in TiC, PHIL MAG A, 79(3), 1999, pp. 705-721
Atomistic simulation of grain boundary segregation in zinc oxide
Authors: Domingos, HS Bristowe, PD
Citation: Hs. Domingos et Pd. Bristowe, Atomistic simulation of grain boundary segregation in zinc oxide, SCR MATER, 41(12), 1999, pp. 1347-1352
A first principles investigation of stacking fault energies and bonding inwurtzite materials
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, A first principles investigation of stacking fault energies and bonding inwurtzite materials, J PHYS-COND, 11(26), 1999, pp. 5057-5063
Classical simulations of the properties of group-III nitrides
Authors: Chisholm, JA Lewis, DW Bristowe, PD
Citation: Ja. Chisholm et al., Classical simulations of the properties of group-III nitrides, J PHYS-COND, 11(22), 1999, pp. L235-L239
Classical and quantum simulations of In and Al incorporation in GaN
Authors: Chisholm, JA Bristowe, PD
Citation: Ja. Chisholm et Pd. Bristowe, Classical and quantum simulations of In and Al incorporation in GaN, PHYS ST S-A, 176(1), 1999, pp. 257-261
Risultati: 1-16 |