Authors: Brudnyi, VN Grinyaev, SN

Citation: Vn. Brudnyi et Sn. Grinyaev, Fermi level pinning and electrical properties of irradiated CdxHg1-xTe alloys, SEMICONDUCT, 35(7), 2001, pp. 784-787

Authors: Brudnyi, VN Kolin, NG Merkurisov, DI Novikov, VA

Citation: Vn. Brudnyi et al., Changes in the optical-absorption spectra of transmutation-doped GaAs as aresult of annealing, SEMICONDUCT, 35(6), 2001, pp. 708-713

Authors: Brudnyi, VN Potapov, AI

Citation: Vn. Brudnyi et Ai. Potapov, Electrical properties of the proton-irradiated semi-insulating GaAs : Cr, SEMICONDUCT, 35(12), 2001, pp. 1361-1365

Authors: Brudnyi, VN Bublik, VT Goshitskii, BN Emtsev, VV Kazanskii, YA Konopleva, RF Konobeev, YV Kolin, NG Kuz'min, II Mil'vidskii, MG Ozerov, RP Osvenskii, VB Plotnikov, VG Simonov, AP Smirnov, LS Kharchenko, VA

Citation: Vn. Brudnyi et al., Sergei Petrovich Solov'ev (1932-2000), SEMICONDUCT, 34(12), 2000, pp. 1410-1411

Authors: Brudnyi, VN

Citation: Vn. Brudnyi, Radiation defects in semiconductors under hydrostatic pressure, SEMICONDUCT, 33(11), 1999, pp. 1166-1170

Authors: Brudnyi, VN Gradoboev, AV Peshev, VV

Citation: Vn. Brudnyi et al., The broad midgap deep-level transient spectroscopy band in proton (65 MeV)and fast neutron-irradiated n-GaAs, PHYS ST S-B, 212(2), 1999, pp. 229-239