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Results:
1-7
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Results: 7
Authors:
Brunthaler, G
Prinz, A
Bauer, G
Pudalov, VM
Citation: G. Brunthaler et al., Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers - art. no. 096802, PHYS REV L, 8709(9), 2001, pp. 6802
Authors:
Prinz, A
Pudalov, VM
Brunthaler, G
Bauer, G
Citation: A. Prinz et al., Metal-insulator transition in Si-MOS structures, SUPERLATT M, 27(5-6), 2000, pp. 301-310
Authors:
Brunthaler, G
Prinz, A
Bauer, G
Pudalov, VM
Dizhur, EM
Jaroszynski, J
Glod, P
Dietl, T
Citation: G. Brunthaler et al., Weak localization in the 2D metallic regime of Si-MOS, ANN PHYSIK, 8(7-9), 1999, pp. 579-584
Authors:
Pudalov, VM
Brunthaler, G
Prinz, A
Bauer, G
Citation: Vm. Pudalov et al., Maximum metallic conductivity in Si-MOS structures, PHYS REV B, 60(4), 1999, pp. R2154-R2156
Authors:
Herz, K
Bacher, G
Forchel, A
Straub, H
Brunthaler, G
Faschinger, W
Bauer, G
Vieu, C
Citation: K. Herz et al., Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization, PHYS REV B, 59(4), 1999, pp. 2888-2893
Authors:
Prinz, A
Brunthaler, G
Ueta, Y
Springholz, G
Bauer, G
Grabecki, G
Dietl, T
Citation: A. Prinz et al., Electron localization in n-Pb1-xEuxTe, PHYS REV B, 59(20), 1999, pp. 12983-12990
Authors:
Pudalov, VM
Brunthaler, G
Prinz, A
Bauer, G
Citation: Vm. Pudalov et al., Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures, JETP LETTER, 70(1), 1999, pp. 48-53
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1-7
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