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Results:
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Results: 20
Authors:
Checchetto, R
Miotello, A
Brusa, RS
Citation: R. Checchetto et al., Deuterium effusion from nanocrystalline boron nitride thin films, J PHYS-COND, 13(26), 2001, pp. 5853-5864
Authors:
Gialanella, S
Brusa, RS
Deng, W
Marino, F
Spataru, T
Principi, G
Citation: S. Gialanella et al., Defect structures in FeAl b2 alloys, J ALLOY COM, 317, 2001, pp. 485-490
Authors:
Pliszka, D
Gazda, M
Kusz, B
Trzebiatowski, K
Karwasz, GP
Deng, W
Brusa, RS
Zecca, A
Citation: D. Pliszka et al., Surfaces of electron-emitting glasses studied by a slow positron beam, ACT PHY P A, 99(3-4), 2001, pp. 465-472
Authors:
Karwasz, GP
Brusa, RS
Zecca, A
Citation: Gp. Karwasz et al., One century of experiments on electron-atom and molecule scattering: A critical review of integral cross-sections III. Hydrocarbons and halides, RIV NUOV CI, 24(4), 2001, pp. 1-101
Authors:
Karwasz, GP
Brusa, RS
Zecca, A
Citation: Gp. Karwasz et al., One century of experiments on electron-atom and molecule scattering: a critical review of integral cross-sections II. - Polyatomic molecules, RIV NUOV CI, 24(1), 2001, pp. 1-118
Authors:
Reinoso, M
Brusa, RS
Somoza, A
Deng, W
Karwasz, GP
Zecca, A
Halac, EB
Huck, H
Citation: M. Reinoso et al., Positron study of defects in a-SixCl-x films produced by ion beam deposition method, APPL SURF S, 177(1-2), 2001, pp. 96-102
Authors:
Brusa, RS
Deng, W
Karwasz, GP
Zecca, A
Pliszka, D
Citation: Rs. Brusa et al., Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si, APPL PHYS L, 79(10), 2001, pp. 1492-1494
Authors:
Brusa, RS
Karwasz, GP
Tiengo, N
Zecca, A
Corni, F
Tonini, R
Ottaviani, G
Citation: Rs. Brusa et al., Formation of vacancy clusters and cavities in He-implanted silicon studiedby slow-positron annihilation spectroscopy, PHYS REV B, 61(15), 2000, pp. 10154-10166
Authors:
Karwasz, GP
Brusa, RS
Del Longo, L
Zecca, A
Citation: Gp. Karwasz et al., Intermediate-energy total cross sections for electron scattering on WF6 - art. no. 024701, PHYS REV A, 6102(2), 2000, pp. 4701
Authors:
Zecca, A
Karwasz, GP
Brusa, RS
Citation: A. Zecca et al., Electron scattering by Ne, Ar and Kr at intermediate and high energies, 0.5-10 keV, J PHYS B, 33(4), 2000, pp. 843-845
Authors:
Karwasz, GP
Barozzi, M
Bettonte, M
Brusa, RS
Zecca, A
Citation: Gp. Karwasz et al., A very low-energy apparatus for positron scattering on atoms and molecules, NUCL INST B, 171(1-2), 2000, pp. 178-181
Authors:
Brusa, RS
Deng, W
Checchetto, R
Karwasz, GP
Zecca, A
Citation: Rs. Brusa et al., Copper thin films used as transmission remoderators for slow positron beams, APPL PHYS L, 76(11), 2000, pp. 1476-1478
Authors:
Mozejko, P
Kasperski, G
Szmytkowski, C
Zecca, A
Karwasz, GP
Del Longo, L
Brusa, RS
Citation: P. Mozejko et al., Absolute total cross-section measurements for electron scattering from silicon tetrachloride, SiCl4, molecules, EUR PHY J D, 6(4), 1999, pp. 481-485
Authors:
Karwasz, GP
Brusa, RS
Piazza, A
Zecca, A
Citation: Gp. Karwasz et al., Total cross sections for electron scattering on chloromethanes: Formulation of the additivity rule, PHYS REV A, 59(2), 1999, pp. 1341-1347
Authors:
Brusa, RS
Citation: Rs. Brusa, Vacancy cluster distributions in He implanted silicon studied by slow positron annihilation spectroscopy, ACT PHY P A, 95(4), 1999, pp. 474-478
Authors:
Karwasz, GP
Brusa, RS
Misiuk, A
Zecca, A
Citation: Gp. Karwasz et al., Positron annihilation studies of Czochralski-grown silicon annealed under pressure, ACT PHY P A, 95(4), 1999, pp. 575-580
Authors:
Zecca, A
Melissa, R
Brusa, RS
Karwasz, GP
Citation: A. Zecca et al., Additivity rule for electron-molecule cross section calculation: A geometrical approach, PHYS LETT A, 257(1-2), 1999, pp. 75-82
Authors:
Brusa, RS
Somoza, A
Huck, H
Tiengo, N
Karwasz, GP
Zecca, A
Reinoso, M
Halac, EB
Citation: Rs. Brusa et al., Microstructural analysis of hard amorphous carbon films deposited with high-energy ion beams, APPL SURF S, 150(1-4), 1999, pp. 202-210
Authors:
Brusa, RS
Karwasz, GP
Tiengo, N
Zecca, A
Corni, F
Calzolari, G
Nobili, C
Citation: Rs. Brusa et al., He-implantation induced defects in Si studied by slow positron annihilation spectroscopy, J APPL PHYS, 85(4), 1999, pp. 2390-2397
Authors:
Corni, F
Calzolari, G
Frabboni, S
Nobili, C
Ottaviani, G
Tonini, R
Cerofolini, GF
Leone, D
Servidori, M
Brusa, RS
Karwasz, GP
Tiengo, N
Zecca, A
Citation: F. Corni et al., Helium-implanted silicon: A study of bubble precursors, J APPL PHYS, 85(3), 1999, pp. 1401-1408
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