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Results: 1-8 |
Results: 8
Sergei Petrovich Solov'ev (1932-2000)
Authors: Brudnyi, VN Bublik, VT Goshitskii, BN Emtsev, VV Kazanskii, YA Konopleva, RF Konobeev, YV Kolin, NG Kuz'min, II Mil'vidskii, MG Ozerov, RP Osvenskii, VB Plotnikov, VG Simonov, AP Smirnov, LS Kharchenko, VA
Citation: Vn. Brudnyi et al., Sergei Petrovich Solov'ev (1932-2000), SEMICONDUCT, 34(12), 2000, pp. 1410-1411
Effect of thermal annealing conditions on the microdefect formation in undoped GaAs single crystals grown by Czochralski method
Authors: Bublik, VT Voronova, MI Markov, AV Shcherbachev, KD
Citation: Vt. Bublik et al., Effect of thermal annealing conditions on the microdefect formation in undoped GaAs single crystals grown by Czochralski method, CRYSTALLO R, 45(5), 2000, pp. 821-826
Defect formation in subsurface Be+- and Se+-doped GaAs layers
Authors: Bublik, VT Kol'tsov, GI Nemirovskii, AV Yurchuk, SY
Citation: Vt. Bublik et al., Defect formation in subsurface Be+- and Se+-doped GaAs layers, CRYSTALLO R, 45(4), 2000, pp. 689-694
Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing
Authors: Bublik, VT Shcherbachev, KD Komarnitskaya, EA Parkhomenko, YN Vygovskaya, EA Evgen'ev, SB
Citation: Vt. Bublik et al., Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing, CRYSTALLO R, 44(6), 1999, pp. 1035-1041
Specific features of defect formation in Si-implanted (211)GaAs wafers
Authors: Bublik, VT Evgen'ev, SB Ivanov, SP Kalinin, AA Milvidskii, MG Nemirovskii, AV
Citation: Vt. Bublik et al., Specific features of defect formation in Si-implanted (211)GaAs wafers, CRYSTALLO R, 44(5), 1999, pp. 829-832
Effect of doping and low-temperature annealing on generation of microdefects in Czochralski-grown silicon single crystals studied by X-ray diffuse scattering
Authors: Bublik, VT Zotov, NM
Citation: Vt. Bublik et Nm. Zotov, Effect of doping and low-temperature annealing on generation of microdefects in Czochralski-grown silicon single crystals studied by X-ray diffuse scattering, CRYSTALLO R, 44(4), 1999, pp. 635-639
Peculiarities of defect generation in Si+-implanted GaAs (211)
Authors: Bublik, VT Evgeniev, SB Ivanov, SP Kalinin, AA Milvidskii, MG Nemirovskii, AW
Citation: Vt. Bublik et al., Peculiarities of defect generation in Si+-implanted GaAs (211), NUCL INST B, 147(1-4), 1999, pp. 187-190
Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon
Authors: Belogorokhov, AI Bublik, VT Scherbachev, KD Parkhomenko, YN Makarov, VV Danilin, AB
Citation: Ai. Belogorokhov et al., Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon, NUCL INST B, 147(1-4), 1999, pp. 320-326
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