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Results: 1-7 |
Results: 7

Authors: Zhao, PJ Cui, HL Woolard, DL Jensen, KL Buot, FA
Citation: Pj. Zhao et al., Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation, IEEE DEVICE, 48(4), 2001, pp. 614-627

Authors: Buot, FA Zhao, P Cui, HL Woolard, DL Jensen, KL Krowne, CM
Citation: Fa. Buot et al., Emitter quantization and double hysteresis in resonant-tunneling structures: A nonlinear model of charge oscillation and current bistability, PHYS REV B, 61(8), 2000, pp. 5644-5665

Authors: Zhao, PJ Cui, HL Woolard, DL Jensen, KL Buot, FA
Citation: Pj. Zhao et al., Origin of hysteresis and plateau-like behavior of the I-V characteristics of resonant tunneling diodes, INT J MOD B, 14(4), 2000, pp. 411-426

Authors: Buot, FA Krowne, CM
Citation: Fa. Buot et Cm. Krowne, Double-barrier THz source based on electrical excitation of electrons and holes (vol 86, pg 5215, 1999), J APPL PHYS, 87(6), 2000, pp. 3189-3189

Authors: Zhao, PJ Cui, HL Woolard, D Jensen, KL Buot, FA
Citation: Pj. Zhao et al., Simulation of resonant tunneling structures: Origin of the I-V hysteresis and plateau-like structure, J APPL PHYS, 87(3), 2000, pp. 1337-1349

Authors: Buot, FA Krowne, CM
Citation: Fa. Buot et Cm. Krowne, Double-barrier THz source based on electrical excitation of electrons and holes, J APPL PHYS, 86(9), 1999, pp. 5215-5231

Authors: Rendell, RW Buot, FA Snow, ES Campbell, PM Park, D Marrian, CRK Magno, R
Citation: Rw. Rendell et al., Operation and design of metal-oxide tunnel transistors, J APPL PHYS, 84(9), 1998, pp. 5021-5031
Risultati: 1-7 |