Authors: Carroll, MS Sturm, JC Buyuklimanli, T

Citation: Ms. Carroll et al., Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation - art. no. 085316, PHYS REV B, 6408(8), 2001, pp. 5316

Authors: Yang, M Carroll, M Sturm, JC Buyuklimanli, T

Citation: M. Yang et al., Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition, J ELCHEM SO, 147(9), 2000, pp. 3541-3545

Authors: Haddara, YM Folmer, BT Law, ME Buyuklimanli, T

Citation: Ym. Haddara et al., Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon, APPL PHYS L, 77(13), 2000, pp. 1976-1978

Authors: Saleh, H Law, ME Bharatan, S Jones, KS Krishnamoorthy, V Buyuklimanli, T

Citation: H. Saleh et al., Energy dependence of transient enhanced diffusion and defect kinetics, APPL PHYS L, 77(1), 2000, pp. 112-114

Authors: Carroll, MS Chang, CL Sturm, JC Buyuklimanli, T

Citation: Ms. Carroll et al., Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation, APPL PHYS L, 73(25), 1998, pp. 3695-3697